Datasheets
IRG4PC50UPBF by:

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRG4PC50UPBF by Infineon Technologies AG

Overview of IRG4PC50UPBF by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for IRG4PC50UPBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7530
Newark Single Igbt, 600V, 55A, Dc Collector Current:55A, Collector Emitter Saturation Voltage Vce(On):2.4V, Power Dissipation Pd:200W, Collector Emitter Voltage V(Br)Ceo:600V, No. Of Pins:3Pins, Operating Temperature Max:150°C, Msl:- Rohs Compliant: Yes |Infineon IRG4PC50UPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
Chip1Cloud IGBT 600V 55A 200W TO247AC 548
RFQ
DISTI # 8650624
element14 Asia-Pacific IGBT, 600V, 55A, TO-247AC RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $7.0925
  • 10 $5.9422
  • 100 $4.7405
  • 500 $4.4328
  • 1,000 $4.0738
$4.0738 / $7.0925 Buy Now
DISTI # 8650624
Farnell IGBT, 600V, 55A, TO-247AC RoHS: Compliant Min Qty: 1 Lead time: 25 Weeks, 2 Days Container: Each 0
  • 1 $3.3692
  • 5 $3.3317
  • 10 $3.2818
  • 50 $3.2444
  • 100 $3.1945
  • 250 $3.1570
$3.1570 / $3.3692 Buy Now
Perfect Parts Corporation   2940
RFQ

Part Details for IRG4PC50UPBF

IRG4PC50UPBF Part Data Attributes

IRG4PC50UPBF Infineon Technologies AG
Buy Now Datasheet
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IRG4PC50UPBF Infineon Technologies AG Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 55 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 130 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 390 ns
Turn-off Time-Nom (toff) 258 ns
Turn-on Time-Nom (ton) 52 ns
VCEsat-Max 2 V

Alternate Parts for IRG4PC50UPBF

This table gives cross-reference parts and alternative options found for IRG4PC50UPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PC50UPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4PC50U Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IRG4PC50UPBF vs IRG4PC50U
IRG4PC50U Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier IRG4PC50UPBF vs IRG4PC50U
IRG4PC50UPBF Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRG4PC50UPBF vs IRG4PC50UPBF
Part Number Description Manufacturer Compare
IXSH30N60 Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRG4PC50UPBF vs IXSH30N60
IRGPC30FD2 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN International Rectifier IRG4PC50UPBF vs IRGPC30FD2
APT12GT60KR Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Microsemi Corporation IRG4PC50UPBF vs APT12GT60KR
IRG4PC40SPBF Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN Infineon Technologies AG IRG4PC50UPBF vs IRG4PC40SPBF
IRG4PC40KD Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IRG4PC50UPBF vs IRG4PC40KD
HGT1S12N60C3R Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-262AA, PLASTIC PACKAGE-3 Harris Semiconductor IRG4PC50UPBF vs HGT1S12N60C3R
GT8Q101 TRANSISTOR 8 A, 1200 V, N-CHANNEL IGBT, TO-3PN, TO-3PN, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components IRG4PC50UPBF vs GT8Q101
IRG4BC15UDPBF Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRG4PC50UPBF vs IRG4BC15UDPBF
SGP6N60UFD Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor IRG4PC50UPBF vs SGP6N60UFD
IRG4BC30U-S Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, D2PAK-3 International Rectifier IRG4PC50UPBF vs IRG4BC30U-S

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