There are no models available for this part yet.
Overview of IS42RM32800D-75BLI by Integrated Silicon Solution Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Entertainment and Gaming
Price & Stock for IS42RM32800D-75BLI by Integrated Silicon Solution Inc
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
IS42RM32800D-75BLI-ND
|
DigiKey | IC DRAM 256MBIT PAR 90TFBGA Lead time: 8 Weeks Container: Tray | Limited Supply - Call |
|
Buy Now |
CAD Models for IS42RM32800D-75BLI by Integrated Silicon Solution Inc
Part Data Attributes for IS42RM32800D-75BLI by Integrated Silicon Solution Inc
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
INTEGRATED SILICON SOLUTION INC
|
|
Part Package Code
|
DSBGA
|
|
Package Description
|
TFBGA, BGA90,9X15,32
|
|
Pin Count
|
90
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.24
|
|
Access Mode
|
FOUR BANK PAGE BURST
|
|
Access Time-Max
|
5.4 ns
|
|
Additional Feature
|
AUTO/SELF REFRESH
|
|
Clock Frequency-Max (fCLK)
|
133 MHz
|
|
I/O Type
|
COMMON
|
|
Interleaved Burst Length
|
1,2,4,8
|
|
JESD-30 Code
|
R-PBGA-B90
|
|
JESD-609 Code
|
e1
|
|
Length
|
13 mm
|
|
Memory Density
|
268435456 bit
|
|
Memory IC Type
|
SYNCHRONOUS DRAM
|
|
Memory Width
|
32
|
|
Moisture Sensitivity Level
|
3
|
|
Number of Functions
|
1
|
|
Number of Ports
|
1
|
|
Number of Terminals
|
90
|
|
Number of Words
|
8388608 words
|
|
Number of Words Code
|
8000000
|
|
Operating Mode
|
SYNCHRONOUS
|
|
Operating Temperature-Max
|
85 °C
|
|
Operating Temperature-Min
|
-40 °C
|
|
Organization
|
8MX32
|
|
Output Characteristics
|
3-STATE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
TFBGA
|
|
Package Equivalence Code
|
BGA90,9X15,32
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Qualification Status
|
Not Qualified
|
|
Refresh Cycles
|
4096
|
|
Seated Height-Max
|
1.2 mm
|
|
Self Refresh
|
YES
|
|
Sequential Burst Length
|
1,2,4,8,FP
|
|
Standby Current-Max
|
0.001 A
|
|
Supply Current-Max
|
0.28 mA
|
|
Supply Voltage-Max (Vsup)
|
2.7 V
|
|
Supply Voltage-Min (Vsup)
|
2.3 V
|
|
Supply Voltage-Nom (Vsup)
|
2.5 V
|
|
Surface Mount
|
YES
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
INDUSTRIAL
|
|
Terminal Finish
|
Tin/Silver/Copper (Sn/Ag/Cu)
|
|
Terminal Form
|
BALL
|
|
Terminal Pitch
|
0.8 mm
|
|
Terminal Position
|
BOTTOM
|
|
Time@Peak Reflow Temperature-Max (s)
|
10
|
|
Width
|
8 mm
|
Alternate Parts for IS42RM32800D-75BLI
This table gives cross-reference parts and alternative options found for IS42RM32800D-75BLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42RM32800D-75BLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4S56323LF-HL600 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | IS42RM32800D-75BLI vs K4S56323LF-HL600 |
| K4S56323LF-FR600 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | IS42RM32800D-75BLI vs K4S56323LF-FR600 |
| IS42RM32800D-75BL | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, FBGA-90 | Integrated Silicon Solution Inc | IS42RM32800D-75BLI vs IS42RM32800D-75BL |
| EDS2532JEBH-6B-E | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90 | Elpida Memory Inc | IS42RM32800D-75BLI vs EDS2532JEBH-6B-E |
| K4S56323LF-FL600 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | IS42RM32800D-75BLI vs K4S56323LF-FL600 |
| K4S56323LF-HS600 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | IS42RM32800D-75BLI vs K4S56323LF-HS600 |
| K4S56323LF-FC600 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | IS42RM32800D-75BLI vs K4S56323LF-FC600 |
| K4S56323LF-HN600 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | IS42RM32800D-75BLI vs K4S56323LF-HN600 |
| IS42RM32800D-6BL | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MINI, BGA-90 | Integrated Silicon Solution Inc | IS42RM32800D-75BLI vs IS42RM32800D-6BL |
| K4S56323LF-FE600 | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | IS42RM32800D-75BLI vs K4S56323LF-FE600 |