Datasheets
IS43DR16640B-3DBLI-TR by: Integrated Silicon Solution Inc

DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, TWBGA-84

Part Details for IS43DR16640B-3DBLI-TR by Integrated Silicon Solution Inc

Overview of IS43DR16640B-3DBLI-TR by Integrated Silicon Solution Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Price & Stock for IS43DR16640B-3DBLI-TR

Part # Distributor Description Stock Price Buy
DISTI # 18W6795
Newark 1G, 1.8V, Ddr2, 64Mx16, 333Mhz @ Cl5, 84 Ball Bga (8Mm X 12.5Mm) Rohs, It, T&r |Integrated Silicon Solution (Issi) IS43DR16640B-3DBLI-TR Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1,500 $5.0600
$5.0600 Buy Now
DISTI # IS43DR16640B-3DBLI-TR-ND
DigiKey IC DRAM 1GBIT PARALLEL 84TWBGA Min Qty: 2500 Lead time: 6 Weeks Container: Tape & Reel (TR) Limited Supply - Call
  • 2,500 $5.9157
$5.9157 Buy Now
DISTI # IS43DR16640B-3DBLI
Avnet Americas DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin TWBGA T/R - Tape and Reel (Alt: IS43DR16640B-3DBLI) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 2,500 $6.5025
  • 5,000 $6.3325
  • 10,000 $6.0350
  • 15,000 $5.8650
  • 20,000 $5.6525
  • 25,000 $5.4825
  • 250,000 $5.3125
$5.3125 / $6.5025 Buy Now
DISTI # 870-43DR16640B3DBLIT
Mouser Electronics DRAM 1G (64Mx16) 333MHz DDR2 1.8v RoHS: Compliant 0
  • 2,500 $5.7400
$5.7400 Order Now
DISTI # IS43DR16640B-3DBLI
Avnet Americas DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin TWBGA T/R - Tape and Reel (Alt: IS43DR16640B-3DBLI) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 2,500 $6.5025
  • 5,000 $6.3325
  • 10,000 $6.0350
  • 15,000 $5.8650
  • 20,000 $5.6525
  • 25,000 $5.4825
  • 250,000 $5.3125
$5.3125 / $6.5025 Buy Now
DISTI # IS43DR16640B-3DBLI
Avnet Americas DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin TWBGA T/R - Tape and Reel (Alt: IS43DR16640B-3DBLI) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 2,500 $6.5025
  • 5,000 $6.3325
  • 10,000 $6.0350
  • 15,000 $5.8650
  • 20,000 $5.6525
  • 25,000 $5.4825
  • 250,000 $5.3125
$5.3125 / $6.5025 Buy Now
DISTI # IS43DR16640B-3DBLI-TR
Avnet Asia DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin TWBGA T/R (Alt: IS43DR16640B-3DBLI-TR) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days 0
RFQ
DISTI # IS43DR16640B-3DBLI-TR
Avnet Silica DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin TWBGA T/R (Alt: IS43DR16640B-3DBLI-TR) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 2 Weeks, 0 Days Silica - 0
Buy Now
Sense Electronic Company Limited BGA 4000
RFQ

Part Details for IS43DR16640B-3DBLI-TR

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IS43DR16640B-3DBLI-TR Part Data Attributes

IS43DR16640B-3DBLI-TR Integrated Silicon Solution Inc
Buy Now Datasheet
Compare Parts:
IS43DR16640B-3DBLI-TR Integrated Silicon Solution Inc DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, TWBGA-84
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Package Description TFBGA, BGA84,9X15,32
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.32
Factory Lead Time 8 Weeks
Samacsys Manufacturer Integrated Silicon Solution Inc.
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.45 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 333 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84
Length 12.5 mm
Memory Density 1073741824 bit
Memory IC Type DDR2 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 64MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.015 A
Supply Current-Max 0.25 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for IS43DR16640B-3DBLI-TR

This table gives cross-reference parts and alternative options found for IS43DR16640B-3DBLI-TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS43DR16640B-3DBLI-TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS43DR16640B-3DBL DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 Integrated Silicon Solution Inc IS43DR16640B-3DBLI-TR vs IS43DR16640B-3DBL
IS43DR16640BL-3DBLI DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 Integrated Silicon Solution Inc IS43DR16640B-3DBLI-TR vs IS43DR16640BL-3DBLI
IS43DR16640BL-3DBL DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 Integrated Silicon Solution Inc IS43DR16640B-3DBLI-TR vs IS43DR16640BL-3DBL
Part Number Description Manufacturer Compare
MT47H64M16HR-25EAT:G DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc IS43DR16640B-3DBLI-TR vs MT47H64M16HR-25EAT:G
MT47H64M16HW-3E:G DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 Micron Technology Inc IS43DR16640B-3DBLI-TR vs MT47H64M16HW-3E:G
HY5PS1G1631CFP-S6I DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 SK Hynix Inc IS43DR16640B-3DBLI-TR vs HY5PS1G1631CFP-S6I
MT47H64M16HW-25EAT:G DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 Micron Technology Inc IS43DR16640B-3DBLI-TR vs MT47H64M16HW-25EAT:G
K4T1G164QE-HCLE6 DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 Samsung Semiconductor IS43DR16640B-3DBLI-TR vs K4T1G164QE-HCLE6
HYI18T1G160C2F-3S DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG IS43DR16640B-3DBLI-TR vs HYI18T1G160C2F-3S
MT47H64M16HW-25LIT:G DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 Micron Technology Inc IS43DR16640B-3DBLI-TR vs MT47H64M16HW-25LIT:G
K4T1G164QD-ZCF70 DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor IS43DR16640B-3DBLI-TR vs K4T1G164QD-ZCF70
MT47H64M16HR-37EIT:H DDR DRAM, 64MX16, 0.5ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc IS43DR16640B-3DBLI-TR vs MT47H64M16HR-37EIT:H
HYB18T1G160C2F-3S DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Qimonda AG IS43DR16640B-3DBLI-TR vs HYB18T1G160C2F-3S

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