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Memory / DRAMs / IS43R16160F-6BLI
Datasheets
IS43R16160F-6BLI by: Integrated Silicon Solution Inc

DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TFBGA-60

Part Details for IS43R16160F-6BLI by Integrated Silicon Solution Inc

Overview of IS43R16160F-6BLI by Integrated Silicon Solution Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Entertainment and Gaming

Price & Stock for IS43R16160F-6BLI

Part # Distributor Description Stock Price Buy
DISTI # 706-1373-ND
DigiKey IC DRAM 256MBIT PAR 60TFBGA Min Qty: 1 Lead time: 8 Weeks Container: Tray 1
In Stock
  • 1 $5.0900
  • 10 $4.6450
  • 25 $4.5564
  • 40 $4.5232
  • 190 $4.0588
  • 380 $4.0435
  • 570 $3.7897
  • 950 $3.6298
$3.6298 / $5.0900 Buy Now
DISTI # IS43R16160F-6BLI
Avnet Americas DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA - Bulk (Alt: IS43R16160F-6BLI) RoHS: Compliant Min Qty: 380 Package Multiple: 190 Lead time: 8 Weeks, 0 Days Container: Bulk 0
  • 380 $3.7332
  • 760 $3.6356
  • 1,140 $3.4648
  • 1,900 $3.3672
  • 3,800 $3.2452
  • 19,000 $3.1476
  • 38,000 $3.0500
$3.0500 / $3.7332 Buy Now
DISTI # 870-IS43R16160F-6BLI
Mouser Electronics DRAM 256M, 2.5V, DDR, 16Mx16, 166MHz RoHS: Compliant 116
  • 1 $4.9400
  • 10 $4.6600
  • 100 $4.6200
  • 190 $3.9400
  • 570 $3.6200
  • 1,140 $3.6000
$3.6000 / $4.9400 Buy Now
DISTI # IS43R16160F-6BLI
Avnet Americas DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA - Bulk (Alt: IS43R16160F-6BLI) RoHS: Compliant Min Qty: 380 Package Multiple: 190 Lead time: 8 Weeks, 0 Days Container: Bulk 0
  • 380 $3.7332
  • 760 $3.6356
  • 1,140 $3.4648
  • 1,900 $3.3672
  • 3,800 $3.2452
  • 19,000 $3.1476
  • 38,000 $3.0500
$3.0500 / $3.7332 Buy Now
Ameya Holding Limited 256M, 2.5V, DDR, 16MX16, 166MHZ, 60 BALL BGA (8MMX13MM) 880
RFQ
DISTI # IS43R16160F-6BLI
Avnet Americas DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA - Bulk (Alt: IS43R16160F-6BLI) RoHS: Compliant Min Qty: 380 Package Multiple: 190 Lead time: 8 Weeks, 0 Days Container: Bulk 0
  • 380 $3.7332
  • 760 $3.6356
  • 1,140 $3.4648
  • 1,900 $3.3672
  • 3,800 $3.2452
  • 19,000 $3.1476
  • 38,000 $3.0500
$3.0500 / $3.7332 Buy Now
DISTI # IS43R16160F-6BLI
Avnet Silica DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA (Alt: IS43R16160F-6BLI) RoHS: Compliant Min Qty: 190 Package Multiple: 190 Lead time: 2 Weeks, 0 Days Silica - 0
Buy Now

Part Details for IS43R16160F-6BLI

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IS43R16160F-6BLI Part Data Attributes

Parametric Data
IS43R16160F-6BLI Integrated Silicon Solution Inc
Buy Now Datasheet
Compare Parts:
IS43R16160F-6BLI Integrated Silicon Solution Inc DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TFBGA-60
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Package Description TBGA, BGA60,9X12,40/32
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.24
Factory Lead Time 8 Weeks
Samacsys Manufacturer Integrated Silicon Solution Inc.
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PBGA-B60
Length 13 mm
Memory Density 268435456 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TBGA
Package Equivalence Code BGA60,9X12,40/32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.03 A
Supply Current-Max 0.19 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 8 mm

Alternate Parts for IS43R16160F-6BLI

This table gives cross-reference parts and alternative options found for IS43R16160F-6BLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS43R16160F-6BLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS43R16160F-6BI DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, TFBGA-60 Integrated Silicon Solution Inc IS43R16160F-6BLI vs IS43R16160F-6BI
IS43R16160F-6BL DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, LEAD FREE, TFBGA-60 Integrated Silicon Solution Inc IS43R16160F-6BLI vs IS43R16160F-6BL
Part Number Description Manufacturer Compare
M13S2561616A-5TG2S DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Elite Semiconductor Memory Technology Inc IS43R16160F-6BLI vs M13S2561616A-5TG2S
M13S2561616A-5BG2S DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-60 Elite Semiconductor Memory Technology Inc IS43R16160F-6BLI vs M13S2561616A-5BG2S
MT46V16M16CY-6IT:KTR DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 Micron Technology Inc IS43R16160F-6BLI vs MT46V16M16CY-6IT:KTR
IS43R16160F-6BI DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, TFBGA-60 Integrated Silicon Solution Inc IS43R16160F-6BLI vs IS43R16160F-6BI
MT46V16M16TG-6TIT:FTR DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, TSOP-66 Micron Technology Inc IS43R16160F-6BLI vs MT46V16M16TG-6TIT:FTR
M13S2561616A-4TG2S DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Elite Semiconductor Memory Technology Inc IS43R16160F-6BLI vs M13S2561616A-4TG2S
M13S2561616A-4TVG2A DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Elite Semiconductor Memory Technology Inc IS43R16160F-6BLI vs M13S2561616A-4TVG2A
M13S2561616A-5TIG2S DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Elite Semiconductor Memory Technology Inc IS43R16160F-6BLI vs M13S2561616A-5TIG2S
M13S2561616A-4BVG2A DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-60 Elite Semiconductor Memory Technology Inc IS43R16160F-6BLI vs M13S2561616A-4BVG2A
M13S2561616A-4TVAG2A DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Elite Semiconductor Memory Technology Inc IS43R16160F-6BLI vs M13S2561616A-4TVAG2A

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