Part Details for IXFN26N90 by IXYS Corporation
Overview of IXFN26N90 by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXFN26N90
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IXFN26N90-ND
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DigiKey | MOSFET N-CH 900V 26A SOT-227B Min Qty: 10 Lead time: 57 Weeks Container: Tube | Limited Supply - Call |
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$27.4030 | Buy Now |
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DISTI #
747-IXFN26N90
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Mouser Electronics | Discrete Semiconductor Modules 900V 26A RoHS: Compliant | 0 |
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Order Now | |
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DISTI #
4905570
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element14 Asia-Pacific | MOSFET, N, SOT-227B RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$0.0022 / $0.0059 | Buy Now |
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DISTI #
4905570
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Farnell | MOSFET, N, SOT-227B RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each | 0 |
|
$19.1084 / $71.8257 | Buy Now |
Part Details for IXFN26N90
IXFN26N90 CAD Models
IXFN26N90 Part Data Attributes:
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IXFN26N90
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFN26N90
IXYS Corporation
Power Field-Effect Transistor, 26A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | FLANGE MOUNT, R-PUFM-X4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 26 A | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 600 W | |
| Pulsed Drain Current-Max (IDM) | 104 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFN26N90
This table gives cross-reference parts and alternative options found for IXFN26N90. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN26N90, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STW21N90K5 | N-channel 900 V, 0.25 Ohm typ., 18.5 A MDmesh K5 Power MOSFET in TO-247 package | STMicroelectronics | IXFN26N90 vs STW21N90K5 |
| IXFX26N90 | Power Field-Effect Transistor, 26A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | IXYS Corporation | IXFN26N90 vs IXFX26N90 |
| IXFN27N80Q | Power Field-Effect Transistor, 27A I(D), 800V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN26N90 vs IXFN27N80Q |
| IXFN25N90 | Power Field-Effect Transistor, 25A I(D), 900V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN26N90 vs IXFN25N90 |
| IXFK24N90Q | Power Field-Effect Transistor, 24A I(D), 900V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | IXYS Corporation | IXFN26N90 vs IXFK24N90Q |
| IXFE39N90 | Power Field-Effect Transistor, 34A I(D), 900V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | IXFN26N90 vs IXFE39N90 |
| IXFK24N90Q | Power Field-Effect Transistor, 24A I(D), 900V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | Littelfuse Inc | IXFN26N90 vs IXFK24N90Q |
| IXFX24N90Q | Power Field-Effect Transistor, 24A I(D), 900V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | Littelfuse Inc | IXFN26N90 vs IXFX24N90Q |
| IXFN27N80 | Power Field-Effect Transistor, 27A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN26N90 vs IXFN27N80 |
| IXFX24N90Q | Power Field-Effect Transistor, 24A I(D), 900V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | IXYS Corporation | IXFN26N90 vs IXFX24N90Q |