Part Details for IXFP10N60P by IXYS Corporation
Overview of IXFP10N60P by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFP10N60P
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
747-IXFP10N60P
|
Mouser Electronics | MOSFETs HiPERFET Id10 BVdass600 RoHS: Compliant | 300 |
|
$1.8600 / $2.1300 | Buy Now |
|
Future Electronics | N-Channel 600 V 740 mOhm Enhancement Mode Power MOSFET RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Lead time: 46 Weeks Container: Tube | 0Tube |
|
$1.9400 / $2.1300 | Buy Now |
DISTI #
IXFP10N60P
|
TTI | MOSFETs HiPERFET Id10 BVdass600 Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
|
$1.8600 / $2.0100 | Buy Now |
DISTI #
IXFP10N60P
|
TME | Transistor: N-MOSFET, unipolar, 600V, 10A, 200W, TO220AB, 120ns Min Qty: 1 | 139 |
|
$2.4400 / $3.4000 | Buy Now |
|
LCSC | 600V 10A 740m5A10V 200W 5.5V1mA 1 N-Channel TO-220 MOSFETs ROHS | 47 |
|
$1.5864 / $2.4681 | Buy Now |
Part Details for IXFP10N60P
IXFP10N60P CAD Models
IXFP10N60P Part Data Attributes
|
IXFP10N60P
IXYS Corporation
Buy Now
Datasheet
|
Compare Parts:
IXFP10N60P
IXYS Corporation
Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-220AB | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.74 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 200 W | |
Pulsed Drain Current-Max (IDM) | 25 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | PURE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFP10N60P
This table gives cross-reference parts and alternative options found for IXFP10N60P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFP10N60P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MTP10N60E7 | 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | onsemi | IXFP10N60P vs MTP10N60E7 |
MTB10N60E7 | 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | onsemi | IXFP10N60P vs MTB10N60E7 |
2SK3399(2-10S2B) | TRANSISTOR 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S2B, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | IXFP10N60P vs 2SK3399(2-10S2B) |
IXFA10N60P | Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXFP10N60P vs IXFA10N60P |
IXTA10N60P | Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXFP10N60P vs IXTA10N60P |
IXTP10N60P | Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXYS Corporation | IXFP10N60P vs IXTP10N60P |
STB9NC60T4 | 9A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | STMicroelectronics | IXFP10N60P vs STB9NC60T4 |
IXFP10N60P | Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Littelfuse Inc | IXFP10N60P vs IXFP10N60P |