Datasheets
IXTA18P10T by:

Power Field-Effect Transistor, 18A I(D), 100V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3

Part Details for IXTA18P10T by IXYS Corporation

Overview of IXTA18P10T by IXYS Corporation

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Applications Energy and Power Systems Automotive

Price & Stock for IXTA18P10T

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTA18P10T
Mouser Electronics MOSFET 18 Amps 100V 0.12 Rds 0
  • 1 $2.7100
  • 10 $2.2800
  • 50 $1.7300
$1.7300 / $2.7100 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.4800
$1.4800 Buy Now
DISTI # IXTA18P10T
TTI MOSFET 18 Amps 100V 0.12 Rds Min Qty: 300 Package Multiple: 50 Container: Tube Americas - 0
  • 300 $1.7100
$1.7100 Buy Now
DISTI # IXTA18P10T
TME Transistor: P-MOSFET, TrenchP™, unipolar, -100V, -18A, 83W, TO263 Min Qty: 1 0
  • 1 $1.9800
  • 3 $1.7700
  • 10 $1.6000
  • 50 $1.4800
$1.4800 / $1.9800 RFQ

Part Details for IXTA18P10T

IXTA18P10T CAD Models

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IXTA18P10T Part Data Attributes:

IXTA18P10T IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXTA18P10T IXYS Corporation Power Field-Effect Transistor, 18A I(D), 100V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code D2PAK
Package Description PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 83 W
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTA18P10T

This table gives cross-reference parts and alternative options found for IXTA18P10T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA18P10T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF5NJ9540SCV Power Field-Effect Transistor, 18A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD0.5, 3 PIN Infineon Technologies AG IXTA18P10T vs IRF5NJ9540SCV
IXTP18P10T Power Field-Effect Transistor, 18A I(D), 100V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 IXYS Corporation IXTA18P10T vs IXTP18P10T
IXTY18P10T Power Field-Effect Transistor, 18A I(D), 100V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 IXYS Corporation IXTA18P10T vs IXTY18P10T
IXTA18P10T Power Field-Effect Transistor, Littelfuse Inc IXTA18P10T vs IXTA18P10T
IXTP18P10T Power Field-Effect Transistor, Littelfuse Inc IXTA18P10T vs IXTP18P10T
IXTY18P10T Power Field-Effect Transistor, Littelfuse Inc IXTA18P10T vs IXTY18P10T

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