Datasheets
IXTH130N10T by:

Power Field-Effect Transistor, 130A I(D), 100V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN

Part Details for IXTH130N10T by IXYS Corporation

Overview of IXTH130N10T by IXYS Corporation

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Applications Industrial Automation Energy and Power Systems Transportation and Logistics Renewable Energy Automotive Motor control systems

Price & Stock for IXTH130N10T

Part # Distributor Description Stock Price Buy
DISTI # IXTH130N10T-ND
DigiKey MOSFET N-CH 100V 130A TO247 Min Qty: 1 Lead time: 27 Weeks Container: Tube 12
In Stock
  • 1 $6.1700
  • 30 $4.9287
  • 120 $4.4097
  • 510 $3.8910
  • 1,020 $3.5019
  • 2,010 $3.2814
$3.2814 / $6.1700 Buy Now
DISTI # 747-IXTH130N10T
Mouser Electronics MOSFET 130 Amps 100V 8.5 Rds RoHS: Compliant 23
  • 1 $6.1700
  • 10 $5.4100
  • 30 $4.8000
  • 120 $4.4000
  • 270 $4.2700
  • 510 $3.8900
  • 1,020 $3.2800
$3.2800 / $6.1700 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $3.7600
$3.7600 Buy Now
DISTI # IXTH130N10T
TTI MOSFET 130 Amps 100V 8.5 Rds Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $4.2300
  • 510 $3.8500
  • 1,020 $3.2500
$3.2500 / $4.2300 Buy Now
New Advantage Corporation MOSFET DIS.130A 100V N-CH TO-247AD TRENCHMV RoHS: Compliant Min Qty: 1 Package Multiple: 100 132
  • 100 $8.0800
  • 132 $7.5500
$7.5500 / $8.0800 Buy Now

Part Details for IXTH130N10T

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IXTH130N10T Part Data Attributes

IXTH130N10T IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXTH130N10T IXYS Corporation Power Field-Effect Transistor, 130A I(D), 100V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-247AD
Package Description PLASTIC, TO-247, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 130 A
Drain-source On Resistance-Max 0.0091 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 360 W
Pulsed Drain Current-Max (IDM) 300 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTH130N10T

This table gives cross-reference parts and alternative options found for IXTH130N10T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH130N10T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTQ130N10T Power Field-Effect Transistor, Littelfuse Inc IXTH130N10T vs IXTQ130N10T
IXTP220N075T Power Field-Effect Transistor, 130A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IXYS Corporation IXTH130N10T vs IXTP220N075T
IXTQ130N10T Power Field-Effect Transistor, 130A I(D), 100V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN IXYS Corporation IXTH130N10T vs IXTQ130N10T
IXTA220N075T Power Field-Effect Transistor, 130A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN IXYS Corporation IXTH130N10T vs IXTA220N075T
IXTP130N10T Power Field-Effect Transistor, 130A I(D), 100V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN IXYS Corporation IXTH130N10T vs IXTP130N10T
IXFA130N10T Power Field-Effect Transistor, Littelfuse Inc IXTH130N10T vs IXFA130N10T
IXFA130N10T2 Power Field-Effect Transistor, 130A I(D), 100V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, 3 PIN IXYS Corporation IXTH130N10T vs IXFA130N10T2
SQM120N10-09-GE3 TRANSISTOR 120 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power Vishay Siliconix IXTH130N10T vs SQM120N10-09-GE3
STB120N10F4 N-channel 100 V, 8 mOhm typ., 120 A STripFET(TM) DeepGATE(TM) Power MOSFET in D2PAK package STMicroelectronics IXTH130N10T vs STB120N10F4
IXTP130N10T Power Field-Effect Transistor, Littelfuse Inc IXTH130N10T vs IXTP130N10T

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