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Transistors Power Field-Effect Transistors IXTU01N100D

Transistors
IXTU01N100D
Description: Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN

Overview of IXTU01N100D by IXYS Corporation

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Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IXTU01N100D by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # IXTU01N100D-ND
DigiKey MOSFET N-CH 1000V 400MA TO251 Lead time: 52 Weeks Container: Tube Temporarily Out of Stock
Buy Now

CAD Models for IXTU01N100D by IXYS Corporation
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Part Data Attributes for IXTU01N100D by IXYS Corporation
Parametric Data

IXTU01N100D
IXYS Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Part Package Code
TO-251AA
Package Description
TO-251AA, 3 PIN
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
1000 V
Drain Current-Max (ID)
0.1 A
Drain-source On Resistance-Max
110 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-251AA
JESD-30 Code
R-PSIP-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
DEPLETION MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
25 W
Pulsed Drain Current-Max (IDM)
0.4 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IXTU01N100D
    IXYS Corporation
    Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN
    VS

Alternate Parts for IXTU01N100D

This table gives cross-reference parts and alternative options found for IXTU01N100D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTU01N100D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IXTU01N100D Power Field-Effect Transistor, Littelfuse Inc IXTU01N100D vs IXTU01N100D
IXTY01N100D Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN IXYS Corporation IXTU01N100D vs IXTY01N100D
IXTP01N100D Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AD, TO-220AD, 3 PIN IXYS Corporation IXTU01N100D vs IXTP01N100D
IXTP01N100D Power Field-Effect Transistor, Littelfuse Inc IXTU01N100D vs IXTP01N100D
IXTY01N100D Power Field-Effect Transistor, Littelfuse Inc IXTU01N100D vs IXTY01N100D

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