JAN1N6120US
Description: Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon

Overview of JAN1N6120US by Microchip Technology Inc

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Price & Stock for JAN1N6120US by Microchip Technology Inc

Part # Manufacturer Description Stock Price Buy
DISTI # 35AJ7099
Newark 53.6 V Bi-Directional Tvs B-Body Sq. Melf Rohs Compliant: Yes |Microchip JAN1N6120US RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $12.6100
  • 500 $12.1300
$12.1300 / $12.6100 Buy Now
DISTI # 1086-19472-ND
DigiKey TVS DIODE 29.7VWM 56.28V SQ-MELF Min Qty: 100 Lead time: 25 Weeks Container: Bulk Temporarily Out of Stock
  • 100 $12.6100
$12.6100 Buy Now
DISTI # JAN1N6120US
Avnet Americas Voidless Hermetically Sealed Bi-Directional Transient Voltage Suppressor 16.25V 500W 2-Pin MELF Surface Mount - Bulk (Alt: JAN1N6120US) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 25 Weeks, 0 Days Container: Bulk 0
  • 1 $13.5800
  • 100 $12.6100
  • 500 $12.1300
$12.1300 / $13.5800 Buy Now
DISTI # 494-JAN1N6120US
Mouser Electronics ESD Protection Diodes / TVS Diodes 53.6 V Bi-Directional TVS RoHS: Not Compliant 0
  • 100 $12.6100
$12.6100 Order Now
DISTI # JAN1N6120US
Microchip Technology Inc Bi-Directional TVS _ B-Body Sq. Melf, Projected EOL: 2049-02-05 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $13.5800
$13.5800 Buy Now
Onlinecomponents.com   RoHS: Compliant 0
  • 25 $19.4000
  • 50 $14.5500
  • 75 $13.5800
  • 100 $13.3100
$13.3100 / $19.4000 Buy Now
NAC Hi Rel TVS RoHS: Compliant Min Qty: 25 Package Multiple: 1 0
  • 1 $14.2600
  • 100 $12.9300
  • 500 $12.1200
  • 1,000 $11.8300
$11.8300 / $14.2600 Buy Now
Master Electronics   RoHS: Compliant 0
  • 25 $19.4000
  • 50 $14.5500
  • 75 $13.5800
  • 100 $13.3100
$13.3100 / $19.4000 Buy Now

CAD Models for JAN1N6120US by Microchip Technology Inc
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Part Data Attributes for JAN1N6120US by Microchip Technology Inc

JAN1N6120US
Microchip Technology Inc
-
-
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
Package Description
MELF-2
Reach Compliance Code
compliant
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
37.1 V
Clamping Voltage-Max
56.3 V
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LELF-R2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
500 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
GLASS
Package Shape
ROUND
Package Style
LONG FORM
Polarity
BIDIRECTIONAL
Power Dissipation-Max
2 W
Qualification Status
Qualified
Reference Standard
MIL-19500
Rep Pk Reverse Voltage-Max
29.7 V
Reverse Current-Max
1 µA
Reverse Test Voltage
29.7 V
Surface Mount
YES
Technology
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WRAP AROUND
Terminal Position
END
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    Microchip Technology Inc
    Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon
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Alternate Parts for JAN1N6120US

This table gives cross-reference parts and alternative options found for JAN1N6120US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN1N6120US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
JANTX1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 Micross Components JAN1N6120US vs JANTX1N6120US
JAN1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JAN1N6120US vs JAN1N6120US
1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6120US vs 1N6120US
1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JAN1N6120US vs 1N6120US
JANS1N6120US Trans Voltage Suppressor Diode, 500W, 30V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JAN1N6120US vs JANS1N6120US
JANTXV1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6120US vs JANTXV1N6120US
Part Number Description Manufacturer Compare
JANTX1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 Micross Components JAN1N6120US vs JANTX1N6120US
JAN1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JAN1N6120US vs JAN1N6120US
1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6120US vs 1N6120US
JANS1N6120US Trans Voltage Suppressor Diode, 500W, 30V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JAN1N6120US vs JANS1N6120US
JANTXV1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6120US vs JANTXV1N6120US
1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JAN1N6120US vs 1N6120US
JANTX1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6120US vs JANTX1N6120US

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