Diodes
JANS1N6109US
Description: Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon,

Overview of JANS1N6109US by Microsemi Corporation

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Part Data Attributes for JANS1N6109US by Microsemi Corporation

JANS1N6109US
Microsemi Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
MICROSEMI CORP
Part Package Code
MELF
Pin Count
2
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Min
12.35 V
Breakdown Voltage-Nom
13 V
Case Connection
ISOLATED
Clamping Voltage-Max
19 V
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-MELF-R2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
500 W
Number of Elements
1
Number of Terminals
2
Package Body Material
METAL
Package Shape
ROUND
Package Style
LONG FORM
Polarity
BIDIRECTIONAL
Power Dissipation-Max
5 W
Qualification Status
Not Qualified
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
9.9 V
Surface Mount
YES
Technology
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WRAP AROUND
Terminal Position
END
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  1. JANS1N6109US
    Microsemi Corporation
    Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon,
    VS

Alternate Parts for JANS1N6109US

This table gives cross-reference parts and alternative options found for JANS1N6109US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANS1N6109US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
JAN1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon, Microsemi Corporation JANS1N6109US vs JAN1N6109US
JANTXV1N6109US Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon, MICRO MINIATURE, GLASS, MELF-2 Microsemi Corporation JANS1N6109US vs JANTXV1N6109US
JAN1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 Semtech Corporation JANS1N6109US vs JAN1N6109US
JANTXV1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 Semtech Corporation JANS1N6109US vs JANTXV1N6109US
1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS, D-5B, E-MELF-2 Microsemi Corporation JANS1N6109US vs 1N6109US
Part Number Description Manufacturer Compare
JANTXV1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 Semtech Corporation JANS1N6109US vs JANTXV1N6109US
1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS, D-5B, E-MELF-2 Microsemi Corporation JANS1N6109US vs 1N6109US
JAN1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon, Microsemi Corporation JANS1N6109US vs JAN1N6109US
JANTX1N6109US Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 Semtech Corporation JANS1N6109US vs JANTX1N6109US
JANTXV1N6109US Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon, MICRO MINIATURE, GLASS, MELF-2 Microsemi Corporation JANS1N6109US vs JANTXV1N6109US

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