Part Details for JANSR2N7432 by International Rectifier
Overview of JANSR2N7432 by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for JANSR2N7432
JANSR2N7432 CAD Models
JANSR2N7432 Part Data Attributes
|
JANSR2N7432
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
JANSR2N7432
International Rectifier
Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
|
Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | FLANGE MOUNT, S-MSFM-P3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | S-MSFM-P3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | METAL | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 201 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for JANSR2N7432
This table gives cross-reference parts and alternative options found for JANSR2N7432. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSR2N7432, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRHM8160 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | Infineon Technologies AG | JANSR2N7432 vs IRHM8160 |
IRHM7160 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | Infineon Technologies AG | JANSR2N7432 vs IRHM7160 |
IRHM7160PBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | International Rectifier | JANSR2N7432 vs IRHM7160PBF |
IRHM7160 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | International Rectifier | JANSR2N7432 vs IRHM7160 |
JANSR2N7432 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | JANSR2N7432 vs JANSR2N7432 |
JANSH2N7432 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | JANSR2N7432 vs JANSH2N7432 |
IRHM8160 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | International Rectifier | JANSR2N7432 vs IRHM8160 |