Datasheets
JANTXV1N5621US by:

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2

Part Details for JANTXV1N5621US by Sensitron Semiconductors

Overview of JANTXV1N5621US by Sensitron Semiconductors

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Price & Stock for JANTXV1N5621US

Part # Distributor Description Stock Price Buy
DISTI # JANTXV1N5621US
Avnet Americas Diode Fast Recovery Rectifier 800V 1A 2-Pin MELF-1 - Bag (Alt: JANTXV1N5621US) RoHS: Not Compliant Min Qty: 500 Package Multiple: 250 Lead time: 90 Weeks, 0 Days Container: Bag 0
  • 1 $14.0000
  • 50 $12.2500
  • 100 $10.5000
  • 500 $9.4500
  • 1,000 $8.4000
$8.4000 / $14.0000 Buy Now

Part Details for JANTXV1N5621US

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JANTXV1N5621US Part Data Attributes

JANTXV1N5621US Sensitron Semiconductors
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JANTXV1N5621US Sensitron Semiconductors Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer SENSITRON SEMICONDUCTOR
Package Description MELF-1, 2 PIN
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Factory Lead Time 90 Weeks
Date Of Intro 1994-01-01
Additional Feature HIGH RELIABILITY
Application FAST RECOVERY
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.6 V
JESD-30 Code E-LELF-R2
JESD-609 Code e0
Non-rep Pk Forward Current-Max 25 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Output Current-Max 1 A
Package Body Material GLASS
Package Shape ELLIPTICAL
Package Style LONG FORM
Qualification Status Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 800 V
Reverse Current-Max 0.5 µA
Reverse Recovery Time-Max 0.3 µs
Reverse Test Voltage 800 V
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form WRAP AROUND
Terminal Position END

Alternate Parts for JANTXV1N5621US

This table gives cross-reference parts and alternative options found for JANTXV1N5621US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV1N5621US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BYM12-150-E3/97 Rectifier Diode, 1 Phase, 1 Element, 1A, 150V V(RRM), Silicon, DO-213AB, Vishay Intertechnologies JANTXV1N5621US vs BYM12-150-E3/97
EGL41C-E3/97 Rectifier Diode, 1 Phase, 1 Element, 1A, 150V V(RRM), Silicon, DO-213AB, Vishay Intertechnologies JANTXV1N5621US vs EGL41C-E3/97
BYM12-400 Rectifier Diode, 1 Element, 0.5A, 400V V(RRM), Silicon, DO-213AB, General Instrument Corp JANTXV1N5621US vs BYM12-400
BYM13-30 Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, General Instrument Corp JANTXV1N5621US vs BYM13-30
SGL41-30/25 Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, PLASTIC, MELF-2 Vishay Semiconductors JANTXV1N5621US vs SGL41-30/25
BYM13-30 Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, PLASTIC, MELF-2 Vishay Semiconductors JANTXV1N5621US vs BYM13-30
1N5621UV Rectifier Diode, 1 Element, 1A, Silicon, Sensitron Semiconductors JANTXV1N5621US vs 1N5621UV
EGL41C Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, General Instrument Corp JANTXV1N5621US vs EGL41C
SGL41-30HE3/96 Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, MELF-2 Vishay Intertechnologies JANTXV1N5621US vs SGL41-30HE3/96
JANTX1N5621US Rectifier Diode, 1 Phase, 1 Element, 1A, Silicon Microchip Technology Inc JANTXV1N5621US vs JANTX1N5621US
Part Number Description Manufacturer Compare
EGL41F-E3/96 Rectifier Diode, 1 Phase, 1 Element, 1A, 300V V(RRM), Silicon, DO-213AB, Vishay Intertechnologies JANTXV1N5621US vs EGL41F-E3/96
DL5818 Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, Diodes Incorporated JANTXV1N5621US vs DL5818
BYM12-300-E3/96 Rectifier Diode, 1 Phase, 1 Element, 1A, 300V V(RRM), Silicon, DO-213AB, Vishay Intertechnologies JANTXV1N5621US vs BYM12-300-E3/96
CLLR1U-02BK Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, LEADLESS, MELF-2 Central Semiconductor Corp JANTXV1N5621US vs CLLR1U-02BK
EGL41G Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, General Instrument Corp JANTXV1N5621US vs EGL41G
BYM13-30HE3/97 Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, MELF-2 Vishay Intertechnologies JANTXV1N5621US vs BYM13-30HE3/97
1N5621USV Rectifier Diode, 1 Element, 1A, Silicon, Sensitron Semiconductors JANTXV1N5621US vs 1N5621USV
EGL41G Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-213AB, DO-213AB, 2 PIN International Semiconductor Inc JANTXV1N5621US vs EGL41G
JANTXV1N5621US Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1A, 800V V(RRM), Silicon Microchip Technology Inc JANTXV1N5621US vs JANTXV1N5621US
EGL41F Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon, DO-213AB, DO-213AB, 2 PIN International Semiconductor Inc JANTXV1N5621US vs EGL41F

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