Part Details for JANTXV2N6847U by International Rectifier
Overview of JANTXV2N6847U by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for JANTXV2N6847U
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 2.1A I(D), 200V, 1.725OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 136 |
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$80.3250 / $99.4500 | Buy Now |
Part Details for JANTXV2N6847U
JANTXV2N6847U CAD Models
JANTXV2N6847U Part Data Attributes:
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JANTXV2N6847U
International Rectifier
Buy Now
Datasheet
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Compare Parts:
JANTXV2N6847U
International Rectifier
Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
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Pbfree Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
Part Package Code | LCC | |
Package Description | CHIP CARRIER, R-CQCC-N15 | |
Pin Count | 18 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 180 mJ | |
Case Connection | SOURCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 2.1 A | |
Drain-source On Resistance-Max | 1.725 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-CQCC-N15 | |
Number of Elements | 1 | |
Number of Terminals | 15 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 8.4 A | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500/563 | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | QUAD | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for JANTXV2N6847U
This table gives cross-reference parts and alternative options found for JANTXV2N6847U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6847U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFE9220-JQR-BE4 | Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | JANTXV2N6847U vs IRFE9220-JQR-BE4 |
IRFE9220 | 2.1A, 200V, 1.725ohm, P-CHANNEL, Si, POWER, MOSFET, LCC4-15 | TT Electronics Power and Hybrid / Semelab Limited | JANTXV2N6847U vs IRFE9220 |
IRFE9220 | Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Infineon Technologies AG | JANTXV2N6847U vs IRFE9220 |
IRFE9220-JQR-BE4 | 2.1A, 200V, 1.725ohm, P-CHANNEL, Si, POWER, MOSFET, LCC4-15 | TT Electronics Power and Hybrid / Semelab Limited | JANTXV2N6847U vs IRFE9220-JQR-BE4 |
IRFE9220E4 | Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | JANTXV2N6847U vs IRFE9220E4 |
IRFE9220E4 | 2.1A, 200V, 1.725ohm, P-CHANNEL, Si, POWER, MOSFET, LCC4-15 | TT Electronics Power and Hybrid / Semelab Limited | JANTXV2N6847U vs IRFE9220E4 |
JANTXV2N6847U | Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Infineon Technologies AG | JANTXV2N6847U vs JANTXV2N6847U |
IRFE9220 | Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | JANTXV2N6847U vs IRFE9220 |
IRFE9220-JQR-B | Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, P-Channel, Silicon, Metal-oxide Semiconductor FET, LCC4-15 | TT Electronics Resistors | JANTXV2N6847U vs IRFE9220-JQR-B |
JANTX2N6847U | Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Infineon Technologies AG | JANTXV2N6847U vs JANTX2N6847U |