Datasheets
K4D551638D-TC40 by: Samsung Semiconductor

DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66

Part Details for K4D551638D-TC40 by Samsung Semiconductor

Overview of K4D551638D-TC40 by Samsung Semiconductor

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Available Datasheets

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Price & Stock for K4D551638D-TC40

Part # Distributor Description Stock Price Buy
Bristol Electronics   1066
RFQ

Part Details for K4D551638D-TC40

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K4D551638D-TC40 Part Data Attributes

K4D551638D-TC40 Samsung Semiconductor
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K4D551638D-TC40 Samsung Semiconductor DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2
Package Description TSOP2, TSSOP66,.46
Pin Count 66
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 250 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
JESD-609 Code e0
Length 22.22 mm
Memory Density 268435456 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 65 °C
Operating Temperature-Min
Organization 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.07 A
Supply Current-Max 0.41 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.5 V
Supply Voltage-Nom (Vsup) 2.6 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for K4D551638D-TC40

This table gives cross-reference parts and alternative options found for K4D551638D-TC40. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4D551638D-TC40, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4D551638D-LC400 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Samsung Semiconductor K4D551638D-TC40 vs K4D551638D-LC400
K4D551638D-TC400 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4D551638D-TC40 vs K4D551638D-TC400
Part Number Description Manufacturer Compare
HYB25DC256163CE-5 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 Qimonda AG K4D551638D-TC40 vs HYB25DC256163CE-5
HYB25D256161CE-4 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, LEAD AND HALOGEN FREE, PLASTIC, TSOP2-66 Infineon Technologies AG K4D551638D-TC40 vs HYB25D256161CE-4
K4D551638D-TC33 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4D551638D-TC40 vs K4D551638D-TC33
K4D551638D-LC360 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Samsung Semiconductor K4D551638D-TC40 vs K4D551638D-LC360
HYB25D256163CE-4 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 Qimonda AG K4D551638D-TC40 vs HYB25D256163CE-4
K4D551638F-TC400 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4D551638D-TC40 vs K4D551638F-TC400
K4D551638D-TC36 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4D551638D-TC40 vs K4D551638D-TC36
K4D551638D-LC400 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Samsung Semiconductor K4D551638D-TC40 vs K4D551638D-LC400
K4D551638D-TC400 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4D551638D-TC40 vs K4D551638D-TC400
K4D551638D-TC360 DDR DRAM, 16MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4D551638D-TC40 vs K4D551638D-TC360

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