There are no models available for this part yet.
Overview of K4E641612C-TC50 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Consumer Electronics
Education and Research
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Price & Stock for K4E641612C-TC50 by Samsung Semiconductor
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Quest Components | Dynamic RAM, EDO, 4M x 16, 50 Pin, Plastic, TSOP | 16 |
|
$9.0000 / $12.0000 | Buy Now |
CAD Models for K4E641612C-TC50 by Samsung Semiconductor
Part Data Attributes for K4E641612C-TC50 by Samsung Semiconductor
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
SAMSUNG SEMICONDUCTOR INC
|
|
Part Package Code
|
TSOP2
|
|
Package Description
|
0.400 INCH, PLASTIC, TSOP2-50
|
|
Pin Count
|
50
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.02
|
|
Access Mode
|
FAST PAGE WITH EDO
|
|
Access Time-Max
|
50 ns
|
|
Additional Feature
|
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
|
|
I/O Type
|
COMMON
|
|
JESD-30 Code
|
R-PDSO-G50
|
|
JESD-609 Code
|
e0
|
|
Length
|
20.95 mm
|
|
Memory Density
|
67108864 bit
|
|
Memory IC Type
|
EDO DRAM
|
|
Memory Width
|
16
|
|
Number of Functions
|
1
|
|
Number of Ports
|
1
|
|
Number of Terminals
|
50
|
|
Number of Words
|
4194304 words
|
|
Number of Words Code
|
4000000
|
|
Operating Mode
|
ASYNCHRONOUS
|
|
Operating Temperature-Max
|
70 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
4MX16
|
|
Output Characteristics
|
3-STATE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
TSOP2
|
|
Package Equivalence Code
|
TSOP50,.46,32
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE, THIN PROFILE
|
|
Qualification Status
|
Not Qualified
|
|
Refresh Cycles
|
4096
|
|
Seated Height-Max
|
1.2 mm
|
|
Self Refresh
|
NO
|
|
Standby Current-Max
|
0.0005 A
|
|
Supply Current-Max
|
0.12 mA
|
|
Supply Voltage-Max (Vsup)
|
3.6 V
|
|
Supply Voltage-Min (Vsup)
|
3 V
|
|
Supply Voltage-Nom (Vsup)
|
3.3 V
|
|
Surface Mount
|
YES
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
COMMERCIAL
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
GULL WING
|
|
Terminal Pitch
|
0.8 mm
|
|
Terminal Position
|
DUAL
|
|
Width
|
10.16 mm
|
Alternate Parts for K4E641612C-TC50
This table gives cross-reference parts and alternative options found for K4E641612C-TC50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4E641612C-TC50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HM5164165ATT-5 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Hitachi Ltd | K4E641612C-TC50 vs HM5164165ATT-5 |
| TC5165165AFT-50 | IC 4M X 16 EDO DRAM, 50 ns, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50, Dynamic RAM | Toshiba America Electronic Components | K4E641612C-TC50 vs TC5165165AFT-50 |
| K4E641612B-TL500 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4E641612C-TC50 vs K4E641612B-TL500 |
| KM416V4004BS-L5 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4E641612C-TC50 vs KM416V4004BS-L5 |
| K4E661612E-TC50 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4E641612C-TC50 vs K4E661612E-TC50 |
| HYB3165165BT-50 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Siemens | K4E641612C-TC50 vs HYB3165165BT-50 |
| K4E641612B-TC500 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4E641612C-TC50 vs K4E641612B-TC500 |
| IS41LV16400-50T | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 | Integrated Silicon Solution Inc | K4E641612C-TC50 vs IS41LV16400-50T |
| HYB3165165ATL-50 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50 | Siemens | K4E641612C-TC50 vs HYB3165165ATL-50 |
| HY51V65163HGLT-5 | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | SK Hynix Inc | K4E641612C-TC50 vs HY51V65163HGLT-5 |