Part Details for K4F641612D-TC60 by Samsung Semiconductor
Overview of K4F641612D-TC60 by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for K4F641612D-TC60
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 4M X 16 FAST PAGE DRAM, 60 ns, PDSO50 | 55 |
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Part Details for K4F641612D-TC60
K4F641612D-TC60 CAD Models
K4F641612D-TC60 Part Data Attributes
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K4F641612D-TC60
Samsung Semiconductor
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Datasheet
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K4F641612D-TC60
Samsung Semiconductor
Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP50,.46,32 | |
| Pin Count | 50 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FAST PAGE | |
| Access Time-Max | 60 ns | |
| Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PDSO-G50 | |
| JESD-609 Code | e0 | |
| Length | 20.95 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | FAST PAGE DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 50 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP50,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | NO | |
| Standby Current-Max | 0.0005 A | |
| Supply Current-Max | 0.11 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for K4F641612D-TC60
This table gives cross-reference parts and alternative options found for K4F641612D-TC60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4F641612D-TC60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| M5M465160DTP-6S | Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, TSOP-50 | Mitsubishi Electric | K4F641612D-TC60 vs M5M465160DTP-6S |
| HYB3165160AT-60 | Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 | Infineon Technologies AG | K4F641612D-TC60 vs HYB3165160AT-60 |
| HM5165160TT-6 | Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Hitachi Ltd | K4F641612D-TC60 vs HM5165160TT-6 |
| K4F661612C-TL600 | Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4F641612D-TC60 vs K4F661612C-TL600 |
| MT4LC4M16K2TG-6 | Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 | Micron Technology Inc | K4F641612D-TC60 vs MT4LC4M16K2TG-6 |
| KM416V4100C-SL6 | Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Samsung Semiconductor | K4F641612D-TC60 vs KM416V4100C-SL6 |
| HYB3164160ATL-60 | Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50 | Siemens | K4F641612D-TC60 vs HYB3164160ATL-60 |
| HY51V64160LTC-60 | Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | SK Hynix Inc | K4F641612D-TC60 vs HY51V64160LTC-60 |
| HY51V64160TC-60 | Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | SK Hynix Inc | K4F641612D-TC60 vs HY51V64160TC-60 |
| HYB3164160ATL-60 | Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 | Infineon Technologies AG | K4F641612D-TC60 vs HYB3164160ATL-60 |