Datasheets
K4H511638C-UCCC by: Samsung Semiconductor

DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66,

Part Details for K4H511638C-UCCC by Samsung Semiconductor

Overview of K4H511638C-UCCC by Samsung Semiconductor

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Applications Education and Research Consumer Electronics Computing and Data Storage

Price & Stock for K4H511638C-UCCC

Part # Distributor Description Stock Price Buy
Bristol Electronics   8
RFQ

Part Details for K4H511638C-UCCC

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K4H511638C-UCCC Part Data Attributes

K4H511638C-UCCC Samsung Semiconductor
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K4H511638C-UCCC Samsung Semiconductor DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Time-Max 0.65 ns
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
JESD-609 Code e6
Memory Density 536870912 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Terminals 66
Number of Words 33554432 words
Number of Words Code 32000000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSSOP
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 2,4,8
Standby Current-Max 0.005 A
Supply Current-Max 0.4 mA
Supply Voltage-Nom (Vsup) 2.6 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN BISMUTH
Terminal Form GULL WING
Terminal Pitch 0.635 mm
Terminal Position DUAL

Alternate Parts for K4H511638C-UCCC

This table gives cross-reference parts and alternative options found for K4H511638C-UCCC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H511638C-UCCC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4H511638F-LLCC0 DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor K4H511638C-UCCC vs K4H511638F-LLCC0
K4H511638C-UCCC0 DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor K4H511638C-UCCC vs K4H511638C-UCCC0
K4H511638B-TCC4 DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H511638C-UCCC vs K4H511638B-TCC4
K4H511638D-ULCC0 DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor K4H511638C-UCCC vs K4H511638D-ULCC0
K4H511638C-ULCC0 DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor K4H511638C-UCCC vs K4H511638C-ULCC0
K4H511638D-UCCCT DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor K4H511638C-UCCC vs K4H511638D-UCCCT
K4H511638F-LCCC0 DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor K4H511638C-UCCC vs K4H511638F-LCCC0
Part Number Description Manufacturer Compare
V58C2512164SDUI5BE DDR DRAM, 32MX16, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H511638C-UCCC vs V58C2512164SDUI5BE
V58C2512164SALE5I DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H511638C-UCCC vs V58C2512164SALE5I
HYB25D512160CT-6 DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Infineon Technologies AG K4H511638C-UCCC vs HYB25D512160CT-6
V58C2512164SDUI75I DDR DRAM, 32MX16, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H511638C-UCCC vs V58C2512164SDUI75I
V58C2512164SDUI5BH DDR DRAM, 32MX16, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H511638C-UCCC vs V58C2512164SDUI5BH
V58C2512164SAI5I 32MX16 DDR DRAM, 0.7ns, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H511638C-UCCC vs V58C2512164SAI5I
DPDD32MX16WSCY5-DP-XX0715 DDR DRAM Module, 32MX16, CMOS, STACK, TSOP-66 B&B Electronics Manufacturing Company K4H511638C-UCCC vs DPDD32MX16WSCY5-DP-XX0715
MT46V32M16D2TG-8 DDR DRAM, 32MX16, 0.8ns, CMOS, PDSO66, Micron Technology Inc K4H511638C-UCCC vs MT46V32M16D2TG-8
HYB25D512160AE-8 DDR DRAM, 32MX16, 0.8ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 Infineon Technologies AG K4H511638C-UCCC vs HYB25D512160AE-8
V58C2512164SAI6I 32MX16 DDR DRAM, 0.7ns, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H511638C-UCCC vs V58C2512164SAI6I

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