K4J55323QI-BJ1A
Samsung Semiconductor
Description: DDR DRAM, 8MX32, 0.2ns, CMOS, PBGA136

Overview of K4J55323QI-BJ1A by Samsung Semiconductor

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  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Computing and Data Storage

Price & Stock for K4J55323QI-BJ1A by Samsung Semiconductor

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   1679
RFQ

CAD Models for K4J55323QI-BJ1A by Samsung Semiconductor
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Part Data Attributes for K4J55323QI-BJ1A by Samsung Semiconductor

K4J55323QI-BJ1A
Samsung Semiconductor
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Package Description
FBGA, BGA136,12X17,32
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.24
Access Time-Max
0.2 ns
Clock Frequency-Max (fCLK)
1000 MHz
I/O Type
COMMON
Interleaved Burst Length
4,8
JESD-30 Code
R-PBGA-B136
Memory Density
268435456 bit
Memory IC Type
GDDR3 DRAM
Memory Width
32
Number of Terminals
136
Number of Words
8388608 words
Number of Words Code
8000000
Operating Temperature-Max
85 °C
Operating Temperature-Min
Organization
8MX32
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
FBGA
Package Equivalence Code
BGA136,12X17,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH
Qualification Status
Not Qualified
Refresh Cycles
4096
Sequential Burst Length
4,8
Standby Current-Max
0.095 A
Supply Current-Max
1.145 mA
Supply Voltage-Nom (Vsup)
1.9 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
OTHER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
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  1. K4J55323QI-BJ1A
    Samsung Semiconductor
    DDR DRAM, 8MX32, 0.2ns, CMOS, PBGA136
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