Part Details for K4S161622D-TC60 by Samsung Semiconductor
Overview of K4S161622D-TC60 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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LTC6090HS8E-5#TRPBF | Analog Devices | 140V CMOS R2R Out, pA In C Op | |
LTC6090IFE-5#TRPBF | Analog Devices | 140V CMOS R2R Out, pA In C Op | |
LTC6078CDD#PBF | Analog Devices | uP Prec, 2x CMOS R2R In/Out Am |
Part Details for K4S161622D-TC60
K4S161622D-TC60 CAD Models
K4S161622D-TC60 Part Data Attributes
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K4S161622D-TC60
Samsung Semiconductor
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K4S161622D-TC60
Samsung Semiconductor
Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | |
Pin Count | 50 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | DUAL BANK PAGE BURST | |
Access Time-Max | 5.5 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 166 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G50 | |
JESD-609 Code | e0 | |
Length | 20.95 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 50 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 1MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP50,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 2048 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.15 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for K4S161622D-TC60
This table gives cross-reference parts and alternative options found for K4S161622D-TC60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S161622D-TC60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
K4S161622E-TC60 | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | Samsung Semiconductor | K4S161622D-TC60 vs K4S161622E-TC60 |