Part Details for K4S161622D-TE50 by Samsung Semiconductor
Overview of K4S161622D-TE50 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
TE505S16-40QC-G | Rochester Electronics LLC | TE505S16 - Field Programmable Gate Array, CMOS, PQFP208 | |
TE505S16-40QI | Rochester Electronics LLC | TE505S16 - Field Programmable Gate Array, CMOS, PQFP208 | |
TE505S16-25QC-G | Rochester Electronics LLC | TE512S32 - Field Programmable Gate Array, CMOS |
Part Details for K4S161622D-TE50
K4S161622D-TE50 CAD Models
K4S161622D-TE50 Part Data Attributes
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K4S161622D-TE50
Samsung Semiconductor
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Datasheet
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K4S161622D-TE50
Samsung Semiconductor
Synchronous DRAM, 1MX16, 4.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSOP50,.46,32 | |
Pin Count | 50 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | DUAL BANK PAGE BURST | |
Access Time-Max | 4.5 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 200 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G50 | |
JESD-609 Code | e0 | |
Length | 20.95 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 50 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -25 °C | |
Organization | 1MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP50,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 2048 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.16 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for K4S161622D-TE50
This table gives cross-reference parts and alternative options found for K4S161622D-TE50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S161622D-TE50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
VG3617161ET-8 | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Vanguard International Semiconductor Corporation | K4S161622D-TE50 vs VG3617161ET-8 |
M52D16161A-10TIG | Synchronous DRAM, 1MX16, 9ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 | Elite Semiconductor Memory Technology Inc | K4S161622D-TE50 vs M52D16161A-10TIG |
IS42S16100B-6T | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 | Integrated Silicon Solution Inc | K4S161622D-TE50 vs IS42S16100B-6T |
MSM56V16160DH-15TS-K | Synchronous DRAM, 1MX16, 9ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 | OKI Electric Industry Co Ltd | K4S161622D-TE50 vs MSM56V16160DH-15TS-K |
IC42S16100E-7TL | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50 | Integrated Silicon Solution Inc | K4S161622D-TE50 vs IC42S16100E-7TL |
HY57V161610ETP-55I | Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 | SK Hynix Inc | K4S161622D-TE50 vs HY57V161610ETP-55I |
UPD4218160LG5-A70-7JF | Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | NEC Electronics Group | K4S161622D-TE50 vs UPD4218160LG5-A70-7JF |
TC59S1616AFT-12 | IC 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50, Dynamic RAM | Toshiba America Electronic Components | K4S161622D-TE50 vs TC59S1616AFT-12 |
IS42S16100E-5TL | Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50 | Integrated Silicon Solution Inc | K4S161622D-TE50 vs IS42S16100E-5TL |
UPD4516161G5-A12 | Synchronous DRAM, 1MX16, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Elpida Memory Inc | K4S161622D-TE50 vs UPD4516161G5-A12 |