Part Details for K4S281632F-TC75 by Samsung Semiconductor
Overview of K4S281632F-TC75 by Samsung Semiconductor
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for K4S281632F-TC75
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 111 |
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RFQ | ||
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Quest Components | SDRAM, 8M x 16, 54 Pin, Plastic, TSOP | 95 |
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$3.2500 / $7.5000 | Buy Now |
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Quest Components | SDRAM, 8M x 16, 54 Pin, Plastic, TSOP | 16 |
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$4.4880 / $6.1200 | Buy Now |
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Quest Components | SDRAM, 8M x 16, 54 Pin, Plastic, TSOP | 136 |
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$5.5500 / $9.0000 | Buy Now |
Part Details for K4S281632F-TC75
K4S281632F-TC75 CAD Models
K4S281632F-TC75 Part Data Attributes
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K4S281632F-TC75
Samsung Semiconductor
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Datasheet
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K4S281632F-TC75
Samsung Semiconductor
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | |
Pin Count | 54 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 133 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G54 | |
Length | 22.22 mm | |
Memory Density | 134217728 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 8388608 words | |
Number of Words Code | 8000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 8MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP54,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.2 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 10.16 mm |
Alternate Parts for K4S281632F-TC75
This table gives cross-reference parts and alternative options found for K4S281632F-TC75. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S281632F-TC75, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MT48LC8M16A2TG-75:G | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | K4S281632F-TC75 vs MT48LC8M16A2TG-75:G |
NT5SV8M16DT-75B | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Nanya Technology Corporation | K4S281632F-TC75 vs NT5SV8M16DT-75B |
HY57V281620ET-H | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | K4S281632F-TC75 vs HY57V281620ET-H |
K4S281632D-TC75 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S281632F-TC75 vs K4S281632D-TC75 |
NT5SE8M16DS-75B | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | Nanya Technology Corporation | K4S281632F-TC75 vs NT5SE8M16DS-75B |
MT48LC8M16A2TG-75 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | K4S281632F-TC75 vs MT48LC8M16A2TG-75 |
EDS1216AHTA-75-E | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, ROHS COMPLIANT, PLASTIC, TSOP2-54 | Elpida Memory Inc | K4S281632F-TC75 vs EDS1216AHTA-75-E |
K4S281632D-TC7C | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S281632F-TC75 vs K4S281632D-TC7C |
K4S281632K-UC750 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54 | Samsung Semiconductor | K4S281632F-TC75 vs K4S281632K-UC750 |
W9812G6IH-75 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, ROHS COMPLIANT, TSOP2-54 | Winbond Electronics Corp | K4S281632F-TC75 vs W9812G6IH-75 |