Datasheets
K4S281632I-TC60 by: Samsung Semiconductor

Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54,

Part Details for K4S281632I-TC60 by Samsung Semiconductor

Overview of K4S281632I-TC60 by Samsung Semiconductor

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Applications Consumer Electronics Computing and Data Storage

Price & Stock for K4S281632I-TC60

Part # Distributor Description Stock Price Buy
Bristol Electronics   50
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Part Details for K4S281632I-TC60

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K4S281632I-TC60 Part Data Attributes

K4S281632I-TC60 Samsung Semiconductor
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K4S281632I-TC60 Samsung Semiconductor Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54,
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description TSOP, TSOP54,.46,32
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Time-Max 5 ns
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Terminals 54
Number of Words 8388608 words
Number of Words Code 8000000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 4096
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.22 mA
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL

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