Part Details for K4S640432D-TC1L by Samsung Semiconductor
Overview of K4S640432D-TC1L by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for K4S640432D-TC1L
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1498 |
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RFQ |
Part Details for K4S640432D-TC1L
K4S640432D-TC1L CAD Models
K4S640432D-TC1L Part Data Attributes
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K4S640432D-TC1L
Samsung Semiconductor
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Datasheet
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K4S640432D-TC1L
Samsung Semiconductor
Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSOP54,.46,32 | |
Pin Count | 54 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 6 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 100 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G54 | |
JESD-609 Code | e0 | |
Length | 22.22 mm | |
Memory Density | 67108864 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 4 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 16777216 words | |
Number of Words Code | 16000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 16MX4 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP54,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.001 A | |
Supply Current-Max | 0.125 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for K4S640432D-TC1L
This table gives cross-reference parts and alternative options found for K4S640432D-TC1L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S640432D-TC1L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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VG36644041BT-8HA | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Vanguard International Semiconductor Corporation | K4S640432D-TC1L vs VG36644041BT-8HA |
K4S640432C-TC1H0 | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | K4S640432D-TC1L vs K4S640432C-TC1H0 |
HY57V654020ATC-10S | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | K4S640432D-TC1L vs HY57V654020ATC-10S |
MB81F64442B-10LFN | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Limited | K4S640432D-TC1L vs MB81F64442B-10LFN |
MT48LC16M4A2P-8EL:GIT | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | Micron Technology Inc | K4S640432D-TC1L vs MT48LC16M4A2P-8EL:GIT |
MB81F64442B-103LFN | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Semiconductor Limited | K4S640432D-TC1L vs MB81F64442B-103LFN |
MB81F64442C-102LFN | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Semiconductor Limited | K4S640432D-TC1L vs MB81F64442C-102LFN |
HM5264405LTT-80 | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Hitachi Ltd | K4S640432D-TC1L vs HM5264405LTT-80 |
M2V64S20DTP-8 | Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | Mitsubishi Electric | K4S640432D-TC1L vs M2V64S20DTP-8 |
TC59S6404FTL-80 | IC 16M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | Toshiba America Electronic Components | K4S640432D-TC1L vs TC59S6404FTL-80 |