Datasheets
K4T1G164QF-BCF8 by:

DDR DRAM, 64MX16, 0.35ns, CMOS, PBGA84

Part Details for K4T1G164QF-BCF8 by Samsung Semiconductor

Overview of K4T1G164QF-BCF8 by Samsung Semiconductor

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Price & Stock for K4T1G164QF-BCF8

Part # Distributor Description Stock Price Buy
Bristol Electronics   10
RFQ
Quest Components   8
  • 1 $4.0950
  • 3 $3.4125
  • 8 $3.0030
$3.0030 / $4.0950 Buy Now

Part Details for K4T1G164QF-BCF8

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K4T1G164QF-BCF8 Part Data Attributes

K4T1G164QF-BCF8 Samsung Semiconductor
Buy Now Datasheet
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K4T1G164QF-BCF8 Samsung Semiconductor DDR DRAM, 64MX16, 0.35ns, CMOS, PBGA84
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Time-Max 0.35 ns
Clock Frequency-Max (fCLK) 533 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84
Memory Density 1073741824 bit
Memory IC Type DDR2 DRAM
Memory Width 16
Number of Terminals 84
Number of Words 67108864 words
Number of Words Code 64000000
Organization 64MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code FBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 4,8
Standby Current-Max 0.01 A
Supply Current-Max 0.195 mA
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM

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