Part Details for K4W1G1646E-HC12 by Samsung Semiconductor
Overview of K4W1G1646E-HC12 by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for K4W1G1646E-HC12
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 423 |
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RFQ |
Part Details for K4W1G1646E-HC12
K4W1G1646E-HC12 CAD Models
K4W1G1646E-HC12 Part Data Attributes
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K4W1G1646E-HC12
Samsung Semiconductor
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Datasheet
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K4W1G1646E-HC12
Samsung Semiconductor
DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Time-Max | 0.225 ns | |
| Clock Frequency-Max (fCLK) | 800 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B96 | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR3 DRAM | |
| Memory Width | 16 | |
| Number of Terminals | 96 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Organization | 64MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | FBGA | |
| Package Equivalence Code | BGA96,9X16,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 0.01 A | |
| Supply Current-Max | 0.29 mA | |
| Supply Voltage-Nom (Vsup) | 1.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM |
Alternate Parts for K4W1G1646E-HC12
This table gives cross-reference parts and alternative options found for K4W1G1646E-HC12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4W1G1646E-HC12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NT5CB64M16FP-DII | DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96, TFBGA-96 | Nanya Technology Corporation | K4W1G1646E-HC12 vs NT5CB64M16FP-DII |
| K4B1G1646E-HCK00 | DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Samsung Semiconductor | K4W1G1646E-HC12 vs K4B1G1646E-HCK00 |
| H5TQ1G63AFP-H8C | DDR DRAM, 64MX16, 0.125ns, CMOS, PBGA96, FBGA-96 | SK Hynix Inc | K4W1G1646E-HC12 vs H5TQ1G63AFP-H8C |
| MT41J64M16JT-15EIT:G | DDR DRAM, 64MX16, 0.125ns, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | K4W1G1646E-HC12 vs MT41J64M16JT-15EIT:G |
| K4W1G1646E-HC120 | DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Samsung Semiconductor | K4W1G1646E-HC12 vs K4W1G1646E-HC120 |
| H5TQ1G63AFPR-H8C | DDR DRAM, 64MX16, CMOS, PBGA96, HALOGEN FREE, FBGA-96 | SK Hynix Inc | K4W1G1646E-HC12 vs H5TQ1G63AFPR-H8C |
| EDJ1116DBSE-GN-F | DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Elpida Memory Inc | K4W1G1646E-HC12 vs EDJ1116DBSE-GN-F |
| MT41J64M16JT-15E:G | DDR DRAM, 64MX16, 0.125ns, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | K4W1G1646E-HC12 vs MT41J64M16JT-15E:G |
| MT41J64M16LA-125F:B | DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96, 9 X 15.50 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | K4W1G1646E-HC12 vs MT41J64M16LA-125F:B |
| H5TQ1G63AFP-S6C | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA96, FPBGA-96 | SK Hynix Inc | K4W1G1646E-HC12 vs H5TQ1G63AFP-S6C |