Part Details for KM416V1204BJ-L6 by Samsung Semiconductor
Overview of KM416V1204BJ-L6 by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Price & Stock for KM416V1204BJ-L6
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 4 |
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RFQ |
Part Details for KM416V1204BJ-L6
KM416V1204BJ-L6 CAD Models
KM416V1204BJ-L6 Part Data Attributes
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KM416V1204BJ-L6
Samsung Semiconductor
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Datasheet
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Compare Parts:
KM416V1204BJ-L6
Samsung Semiconductor
EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | SOJ | |
| Package Description | SOJ, SOJ42,.44 | |
| Pin Count | 42 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FAST PAGE WITH EDO | |
| Access Time-Max | 60 ns | |
| Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PDSO-J42 | |
| JESD-609 Code | e0 | |
| Length | 27.31 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | EDO DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 42 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | SOJ | |
| Package Equivalence Code | SOJ42,.44 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 1024 | |
| Seated Height-Max | 3.76 mm | |
| Self Refresh | YES | |
| Standby Current-Max | 0.0002 A | |
| Supply Current-Max | 0.15 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | J BEND | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for KM416V1204BJ-L6
This table gives cross-reference parts and alternative options found for KM416V1204BJ-L6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KM416V1204BJ-L6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TMS428169P-60DZ | 1MX16 EDO DRAM, 60ns, PDSO42 | Texas Instruments | KM416V1204BJ-L6 vs TMS428169P-60DZ |
| K4E171612C-JL60 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 | Samsung Semiconductor | KM416V1204BJ-L6 vs K4E171612C-JL60 |
| M5M4V18165CJ-6 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 | Mitsubishi Electric | KM416V1204BJ-L6 vs M5M4V18165CJ-6 |
| KM416V1204AJ-L6 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 | Samsung Semiconductor | KM416V1204BJ-L6 vs KM416V1204AJ-L6 |
| MSM51V18165DSL-60JS | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 | OKI Electric Industry Co Ltd | KM416V1204BJ-L6 vs MSM51V18165DSL-60JS |
| GM71VS18163CLJ-6 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, | LG Semicon Co Ltd | KM416V1204BJ-L6 vs GM71VS18163CLJ-6 |
| MSM51V16165B-60JS | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 | OKI Electric Industry Co Ltd | KM416V1204BJ-L6 vs MSM51V16165B-60JS |
| MSM51V16165A-60JS | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 | OKI Electric Industry Co Ltd | KM416V1204BJ-L6 vs MSM51V16165A-60JS |
| V53C316165AK60L | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 | Mosel Vitelic Corporation | KM416V1204BJ-L6 vs V53C316165AK60L |
| KM416V1004AJ-F6 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, PLASTIC, SOJ-42 | Samsung Semiconductor | KM416V1204BJ-L6 vs KM416V1004AJ-F6 |