Memory
KM432S2030CT-G8
Samsung Semiconductor
Description: Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86

Overview of KM432S2030CT-G8 by Samsung Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Computing and Data Storage

Price & Stock for KM432S2030CT-G8 by Samsung Semiconductor

Part # Manufacturer Description Stock Price Buy
Quest Components SDRAM, 2M x 32, 86 Pin, Plastic, TSSOP 183
  • 1 $9.7842
  • 39 $6.0336
  • 167 $5.3813
$5.3813 / $9.7842 Buy Now
Quest Components SDRAM, 2M x 32, 86 Pin, Plastic, TSSOP 122
  • 1 $3.7500
  • 11 $1.8750
  • 108 $1.6250
$1.6250 / $3.7500 Buy Now

CAD Models for KM432S2030CT-G8 by Samsung Semiconductor
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Part Data Attributes for KM432S2030CT-G8 by Samsung Semiconductor

KM432S2030CT-G8
Samsung Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
TSOP2
Package Description
0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
Pin Count
86
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
6 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
125 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PDSO-G86
JESD-609 Code
e0
Length
22.22 mm
Memory Density
67108864 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
32
Number of Functions
1
Number of Ports
1
Number of Terminals
86
Number of Words
2097152 words
Number of Words Code
2000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
2MX32
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Equivalence Code
TSSOP86,.46,20
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Refresh Cycles
2048
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.002 A
Supply Current-Max
0.16 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Pitch
0.5 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. KM432S2030CT-G8
    Samsung Semiconductor
    Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
    VS

Alternate Parts for KM432S2030CT-G8

This table gives cross-reference parts and alternative options found for KM432S2030CT-G8. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KM432S2030CT-G8, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
V54C365324V-8 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, TSOP2-86 Mosel Vitelic Corporation KM432S2030CT-G8 vs V54C365324V-8
KM432S2030CT-F8 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor KM432S2030CT-G8 vs KM432S2030CT-F8
Part Number Description Manufacturer Compare
W9864G2IH-6I Synchronous DRAM, 2MX32, 5ns, CMOS, PDSO86, 0.400 INCH, ROHS COMPLIANT, TSOP2-86 Winbond Electronics Corp KM432S2030CT-G8 vs W9864G2IH-6I
V54C365324V-8 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, TSOP2-86 Mosel Vitelic Corporation KM432S2030CT-G8 vs V54C365324V-8
HY57V643220DSTP-45I Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc KM432S2030CT-G8 vs HY57V643220DSTP-45I
IS45S32200B-7TA1 Synchronous DRAM, 2MX32, 6.5ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 Integrated Silicon Solution Inc KM432S2030CT-G8 vs IS45S32200B-7TA1
MB811643242A-67FN Synchronous DRAM, 2MX32, 9ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 FUJITSU Limited KM432S2030CT-G8 vs MB811643242A-67FN
MB811L643242B-12LFN 2MX32 SYNCHRONOUS DRAM, 8ns, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 FUJITSU Semiconductor Limited KM432S2030CT-G8 vs MB811L643242B-12LFN
MT48LC2M32B2P-5AIT:G Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, TSOP2-86 Micron Technology Inc KM432S2030CT-G8 vs MT48LC2M32B2P-5AIT:G
KM432S2020BT-F12 Synchronous DRAM, 2MX32, 8ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor KM432S2030CT-G8 vs KM432S2020BT-F12
HY57V643220DTP-45I Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc KM432S2030CT-G8 vs HY57V643220DTP-45I
MB811L643242B-15FN Synchronous DRAM, 2MX32, 8ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 FUJITSU Limited KM432S2030CT-G8 vs MB811L643242B-15FN

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