Part Details for L2N7002LT1G by LRC Leshan Radio Co Ltd
Overview of L2N7002LT1G by LRC Leshan Radio Co Ltd
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for L2N7002LT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 6539 |
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RFQ | ||
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Bristol Electronics | 81694 |
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RFQ | ||
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.115A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB | 2538 |
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$0.0650 / $0.2000 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.115A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB | 5231 |
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$0.0600 / $0.2000 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.115A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB | 65355 |
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$0.0750 / $0.5000 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.115A I(D), 60V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB | 1600 |
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$0.1500 / $0.5000 | Buy Now |
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Chip 1 Exchange | INSTOCK | 26870 |
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RFQ | |
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DISTI #
L2N7002LT1G
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Avnet Asia | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R (Alt: L2N7002LT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days | 15000 |
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$0.0193 / $0.0273 | Buy Now |
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Win Source Electronics | Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R / Small Signal MOSFET 115 mAmps, 60 Volts | 282000 |
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$0.0080 / $0.0110 | Buy Now |
Part Details for L2N7002LT1G
L2N7002LT1G CAD Models
L2N7002LT1G Part Data Attributes
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L2N7002LT1G
LRC Leshan Radio Co Ltd
Buy Now
Datasheet
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Compare Parts:
L2N7002LT1G
LRC Leshan Radio Co Ltd
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, 318, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LESHAN RADIO CO LTD | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, 318, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.115 A | |
| Drain-source On Resistance-Max | 7.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for L2N7002LT1G
This table gives cross-reference parts and alternative options found for L2N7002LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of L2N7002LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N7002C1A-JQRS.GBDM | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN | TT Electronics Resistors | L2N7002LT1G vs 2N7002C1A-JQRS.GBDM |
| 2N7002T-C | Small Signal Field-Effect Transistor | Secos Corporation | L2N7002LT1G vs 2N7002T-C |
| 2N7002C1B-JQRS.CVP | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN | TT Electronics Resistors | L2N7002LT1G vs 2N7002C1B-JQRS.CVP |
| 2N7002C1A-JQRS.SEM | 115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | L2N7002LT1G vs 2N7002C1A-JQRS.SEM |
| 2N7002C1B-JQRS.SEM | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN | TT Electronics Resistors | L2N7002LT1G vs 2N7002C1B-JQRS.SEM |
| 2N7002C1A-JQRS.DA | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN | TT Electronics Resistors | L2N7002LT1G vs 2N7002C1A-JQRS.DA |
| 2N7000-T92-K | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN | Unisonic Technologies Co Ltd | L2N7002LT1G vs 2N7000-T92-K |
| 2N7002C1A-JQRS.CVP | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN | TT Electronics Resistors | L2N7002LT1G vs 2N7002C1A-JQRS.CVP |
| 2N7002C1B-JQRS.RAD | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN | TT Electronics Resistors | L2N7002LT1G vs 2N7002C1B-JQRS.RAD |
| 2N7002C1A-JQRS.XRAY | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN | TT Electronics Resistors | L2N7002LT1G vs 2N7002C1A-JQRS.XRAY |