Part Details for MC-454CB646LFA-A10 by NEC Electronics Group
Overview of MC-454CB646LFA-A10 by NEC Electronics Group
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| P9030-0NTGI | Renesas Electronics Corporation | Single-Chip Qi Wireless Power Transmitter for Tx-A1 and Tx-A10 | |
| P9030-0NTGI8 | Renesas Electronics Corporation | Single-Chip Qi Wireless Power Transmitter for Tx-A1 and Tx-A10 |
Price & Stock for MC-454CB646LFA-A10
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 | 10 |
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Buy Now |
Part Details for MC-454CB646LFA-A10
MC-454CB646LFA-A10 CAD Models
MC-454CB646LFA-A10 Part Data Attributes
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MC-454CB646LFA-A10
NEC Electronics Group
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Datasheet
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MC-454CB646LFA-A10
NEC Electronics Group
Synchronous DRAM Module, 4MX64, 6ns, MOS, DIMM-168
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEC ELECTRONICS CORP | |
| Part Package Code | DIMM | |
| Package Description | , | |
| Pin Count | 168 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| JESD-30 Code | R-XDMA-N168 | |
| Memory Density | 268435456 bit | |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 168 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX64 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | NO | |
| Technology | MOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL |
Alternate Parts for MC-454CB646LFA-A10
This table gives cross-reference parts and alternative options found for MC-454CB646LFA-A10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MC-454CB646LFA-A10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT4LSDT464AY-133XX | Synchronous DRAM Module, 4MX64, 5.4ns, CMOS, LEAD FREE, DIMM-168 | Micron Technology Inc | MC-454CB646LFA-A10 vs MT4LSDT464AY-133XX |
| HYM5V64404ASLNG-70 | EDO DRAM Module, 4MX64, 70ns, CMOS, DIMM-168 | SK Hynix Inc | MC-454CB646LFA-A10 vs HYM5V64404ASLNG-70 |
| MT16D464M-6 | Fast Page DRAM Module, 4MX64, 60ns, CMOS, DIMM-168 | Micron Technology Inc | MC-454CB646LFA-A10 vs MT16D464M-6 |
| MC-424LFG641FA-A70 | EDO DRAM Module, 4MX64, 70ns, MOS, DIM-168 | NEC Electronics Group | MC-454CB646LFA-A10 vs MC-424LFG641FA-A70 |
| STI644100D1-70GN | Fast Page DRAM Module, 4MX64, 70ns, MOS, DIMM-168 | Simple Tech Inc | MC-454CB646LFA-A10 vs STI644100D1-70GN |
| MT16LD464G-6XS | EDO DRAM Module, 4MX64, 60ns, CMOS, DIMM-168 | Micron Technology Inc | MC-454CB646LFA-A10 vs MT16LD464G-6XS |
| MT16LD464G-5BN | EDO DRAM Module, 4MX64, 52ns, CMOS, DIMM-168 | Micron Technology Inc | MC-454CB646LFA-A10 vs MT16LD464G-5BN |
| GMM7644100CS-6 | Fast Page DRAM Module, 4MX64, 60ns, CMOS, DIMM-168 | LG Semicon Co Ltd | MC-454CB646LFA-A10 vs GMM7644100CS-6 |
| VS464641641BTGA-8H | Synchronous DRAM Module, 4MX64, 6ns, CMOS, DIMM-168 | Vanguard International Semiconductor Corporation | MC-454CB646LFA-A10 vs VS464641641BTGA-8H |
| M366F0484BT1-C50 | EDO DRAM Module, 4MX64, 50ns, CMOS, DIMM-168 | Samsung Semiconductor | MC-454CB646LFA-A10 vs M366F0484BT1-C50 |