Part Details for MC-458CB64SA-A10 by NEC Electronics Group
Overview of MC-458CB64SA-A10 by NEC Electronics Group
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Renewable Energy
Entertainment and Gaming
Robotics and Drones
Available Datasheets
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P9030-0NTGI | Renesas Electronics Corporation | Single-Chip Qi Wireless Power Transmitter for Tx-A1 and Tx-A10 | |
P9030-0NTGI8 | Renesas Electronics Corporation | Single-Chip Qi Wireless Power Transmitter for Tx-A1 and Tx-A10 |
Part Details for MC-458CB64SA-A10
MC-458CB64SA-A10 CAD Models
MC-458CB64SA-A10 Part Data Attributes
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MC-458CB64SA-A10
NEC Electronics Group
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Datasheet
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MC-458CB64SA-A10
NEC Electronics Group
Synchronous DRAM Module, 8MX64, 6ns, MOS, SODIMM-144
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEC ELECTRONICS CORP | |
Part Package Code | MODULE | |
Package Description | , | |
Pin Count | 144 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.28 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 6 ns | |
JESD-30 Code | R-XDMA-N144 | |
Memory Density | 536870912 bit | |
Memory IC Type | SYNCHRONOUS DRAM MODULE | |
Memory Width | 64 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 144 | |
Number of Words | 8388608 words | |
Number of Words Code | 8000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 8MX64 | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Qualification Status | Not Qualified | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | NO | |
Technology | MOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL |
Alternate Parts for MC-458CB64SA-A10
This table gives cross-reference parts and alternative options found for MC-458CB64SA-A10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MC-458CB64SA-A10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
STI648100G1-70VGC | Fast Page DRAM Module, 8MX64, 70ns, CMOS, DIMM-144 | Simple Tech Inc | MC-458CB64SA-A10 vs STI648100G1-70VGC |
STI648100G1-60VGT | Fast Page DRAM Module, 8MX64, 60ns, CMOS, DIMM-144 | Simple Tech Inc | MC-458CB64SA-A10 vs STI648100G1-60VGT |
MT4LSDT864HG-133XX | Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, SODIMM-144 | Micron Technology Inc | MC-458CB64SA-A10 vs MT4LSDT864HG-133XX |
MB8508S064AE-100DG | 8MX64 SYNCHRONOUS DRAM MODULE, 8.5ns, PDMA144 | FUJITSU Semiconductor Limited | MC-458CB64SA-A10 vs MB8508S064AE-100DG |
MT4LSDT864WG-13EXX | Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, MICRO, DIMM-144 | Micron Technology Inc | MC-458CB64SA-A10 vs MT4LSDT864WG-13EXX |
HYM71V65M801TX-8 | Synchronous DRAM Module, 8MX64, 6ns, CMOS, SODIMM-144 | SK Hynix Inc | MC-458CB64SA-A10 vs HYM71V65M801TX-8 |
HYS64V8220GCDL-7.5-X | Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, SODIMM-144 | Infineon Technologies AG | MC-458CB64SA-A10 vs HYS64V8220GCDL-7.5-X |
MT4LSDT864LHIY-133XX | Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, LEAD FREE, SODIMM-144 | Micron Technology Inc | MC-458CB64SA-A10 vs MT4LSDT864LHIY-133XX |
HYS64V8000GD-8 | Synchronous DRAM Module, 8MX64, 7ns, CMOS, DIMM-144 | Siemens | MC-458CB64SA-A10 vs HYS64V8000GD-8 |
M464S0824ETS-L1L | Synchronous DRAM Module, 8MX64, 6ns, CMOS, SODIMM-144 | Samsung Semiconductor | MC-458CB64SA-A10 vs M464S0824ETS-L1L |