Part Details for MG300Q1US42 by Toshiba America Electronic Components
Overview of MG300Q1US42 by Toshiba America Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MG300Q1US42
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 175 |
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$98.4000 / $120.0000 | Buy Now |
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Quest Components | 300 A, 1200 V, N-CHANNEL IGBT | 140 |
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$105.0000 / $130.0000 | Buy Now |
Part Details for MG300Q1US42
MG300Q1US42 CAD Models
MG300Q1US42 Part Data Attributes:
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MG300Q1US42
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
MG300Q1US42
Toshiba America Electronic Components
TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 300 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of Elements | 1 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Transistor Element Material | SILICON |
Alternate Parts for MG300Q1US42
This table gives cross-reference parts and alternative options found for MG300Q1US42. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG300Q1US42, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2MBI150NC-120 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M233, 7 PIN | Fuji Electric Co Ltd | MG300Q1US42 vs 2MBI150NC-120 |
| MG300Q1US2 | TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q1US42 vs MG300Q1US2 |
| MG500Q1US2 | TRANSISTOR 500 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q1US42 vs MG500Q1US2 |
| MG300Q1US11 | TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q1US42 vs MG300Q1US11 |
| MG600Q1US51 | TRANSISTOR 600 A, 1200 V, N-CHANNEL IGBT, 2-109F3A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q1US42 vs MG600Q1US51 |
| MG300N1US1 | TRANSISTOR 300 A, 1000 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q1US42 vs MG300N1US1 |
| 1MBI400S-120 | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel | Fuji Electric Co Ltd | MG300Q1US42 vs 1MBI400S-120 |
| MG150Q2YS1 | TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q1US42 vs MG150Q2YS1 |
| 2MBI100S-120 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, | Fuji Electric Co Ltd | MG300Q1US42 vs 2MBI100S-120 |
| MG300Q1US41 | TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q1US42 vs MG300Q1US41 |