| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MJD112G | onsemi | $0.3729 | Power Bipolar Transistor | MJD112T4 vs MJD112G |
| NJVMJD112G | onsemi | $0.3807 | Power Bipolar Transistor | MJD112T4 vs NJVMJD112G |
| NJVMJD112T4G | onsemi | $0.3979 | Power Bipolar Transistor | MJD112T4 vs NJVMJD112T4G |
| MJD112T4G | onsemi | $0.4750 | Power Bipolar Transistor | MJD112T4 vs MJD112T4G |
| MJD112RLG | onsemi | $0.6061 | Power Bipolar Transistor | MJD112T4 vs MJD112RLG |
| CJD112 | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD112T4 vs CJD112 |
| CJD112BK | Central Semiconductor Corp | Check for Price | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD112T4 vs CJD112BK |
| MJD112 | onsemi | Check for Price | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD112T4 vs MJD112 |
| MJD112T4 | onsemi | Check for Price | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD112T4 vs MJD112T4 |
| MJD112-T1 | Samsung Semiconductor | Check for Price | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | MJD112T4 vs MJD112-T1 |
Part Details for MJD112T4 by STMicroelectronics
Results Overview of MJD112T4 by STMicroelectronics
- Distributor Offerings: (23 listings)
- Number of FFF Equivalents: (10 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
MJD112T4 Information
MJD112T4 by STMicroelectronics is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJD112T4
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
06X0511
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Newark | Transistor, Bjt, Npn, 100V, 2A, To-252-3, |Stmicroelectronics MJD112T4 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Bulk | 942 |
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$0.3860 / $1.0900 | Buy Now |
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DISTI #
87007605
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Verical | Trans Darlington NPN 100V 2A 20000mW 3-Pin(2+Tab) DPAK T/R RoHS: Exempt Min Qty: 5000 Package Multiple: 2500 Date Code: 2446 | Americas - 12500 |
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$0.1961 | Buy Now |
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DISTI #
82024184
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Verical | Trans Darlington NPN 100V 2A 20000mW 3-Pin(2+Tab) DPAK T/R RoHS: Exempt Min Qty: 28 Package Multiple: 1 Date Code: 2423 | Americas - 4619 |
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$0.2155 / $0.2338 | Buy Now |
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DISTI #
511-MJD112
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Mouser Electronics | Darlington Transistors NPN Power Darlington RoHS: Compliant | 3857 |
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$0.2040 / $1.0500 | Buy Now |
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DISTI #
V36:1790_06555999
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Arrow Electronics | Trans Darlington NPN 100V 2A 20000mW 3-Pin(2+Tab) DPAK T/R COO: China RoHS: Exempt Min Qty: 5000 Package Multiple: 2500 Lead time: 20 Weeks Date Code: 2446 | Americas - 12500 |
|
$0.1961 | Buy Now |
|
DISTI #
V72:2272_06555999
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Arrow Electronics | Trans Darlington NPN 100V 2A 20000mW 3-Pin(2+Tab) DPAK T/R COO: China RoHS: Exempt Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2423 Container: Cut Strips | Americas - 4619 |
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$0.2155 / $0.2412 | Buy Now |
|
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Future Electronics | MJD112 Series NPN 100 V 2 A Complementary Power Darlington - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks Container: Reel | 5000Reel |
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$0.1980 / $0.2050 | Buy Now |
|
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Future Electronics | MJD112 Series NPN 100 V 2 A Complementary Power Darlington - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 2500 Lead time: 20 Weeks Container: Reel | 0Reel |
|
$0.1980 / $0.2050 | Buy Now |
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|
Quest Components | 2A, 100V, NPN, SI, POWER TRANSISTOR | 1873 |
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$0.1500 / $0.3600 | Buy Now |
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Quest Components | 2A, 100V, NPN, SI, POWER TRANSISTOR | 76 |
|
$3.1000 / $4.6500 | Buy Now |
US Tariff Estimator: MJD112T4 by STMicroelectronics
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
MJD112T4 CAD Models
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MJD112T4 Part Data Attributes
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MJD112T4
STMicroelectronics
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Datasheet
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MJD112T4
STMicroelectronics
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-252 | |
| Package Description | Rohs Compliant, Dpak-3 | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 14 Weeks | |
| Case Connection | Collector | |
| Collector Current-Max (IC) | 2 A | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | Darlington With Built-In Diode And Resistor | |
| DC Current Gain-Min (hFE) | 200 | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | Pnp | |
| Power Dissipation Ambient-Max | 20 W | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| VCEsat-Max | 3 V |
Alternate Parts for MJD112T4
This table gives cross-reference parts and alternative options found for MJD112T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD112T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
MJD112T4 Frequently Asked Questions (FAQ)
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The MJD112T4 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
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To ensure proper biasing, connect the base to the emitter through a resistor (Rb) and the collector to the emitter through another resistor (Rc). The recommended values are Rb = 1 kΩ and Rc = 2 kΩ.
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To minimize thermal resistance, use a thermal pad with a minimum size of 2 mm x 2 mm, and ensure the PCB has a thermal via array underneath the pad. This will help to dissipate heat efficiently.
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Yes, the MJD112T4 can be used in switching applications, but it's essential to ensure the device is not operated in saturation mode for extended periods. The maximum switching frequency is 100 kHz, and the device should not be operated at more than 50% duty cycle.
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To protect the MJD112T4 from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has ESD protection circuits, such as TVS diodes or ESD protection arrays.