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Part Details for MJD122-1 by STMicroelectronics
Results Overview of MJD122-1 by STMicroelectronics
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (4 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Motor control systems
MJD122-1 Information
MJD122-1 by STMicroelectronics is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MJD122-1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47AK6662
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Newark | Bipolar Array, Npn, 8A, 20W, Ipak Rohs Compliant: Yes |Stmicroelectronics MJD122-1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 2537 |
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$0.5220 / $1.6200 | Buy Now |
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DISTI #
497-16183-ND
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DigiKey | TRANS NPN DARL 100V 8A TO251 Min Qty: 1 Lead time: 14 Weeks Container: Bulk |
581 In Stock |
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$0.3351 / $1.4500 | Buy Now |
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DISTI #
MJD122-1
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Avnet Americas | Trans Darlington NPN 100V 5A 3-Pin(3+Tab) TO-251 Tube - Rail/Tube (Alt: MJD122-1) COO: Singapore RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Tube | 0 |
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$0.3206 / $0.3394 | Buy Now |
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DISTI #
511-MJD122-1
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Mouser Electronics | Darlington Transistors NPN PWR Darlington Int Anti Collector RoHS: Compliant | 30 |
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$0.3350 / $1.4500 | Buy Now |
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STMicroelectronics | Low voltage NPN power Darlington transistor COO: Singapore RoHS: Compliant Min Qty: 1 | 30 |
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$0.5600 / $1.4200 | Buy Now |
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Future Electronics | MJD122-1 Series 100 V 8 A SMT NPN Darlington Transistor - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 75 Lead time: 14 Weeks Container: Tube | 0Tube |
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$0.3350 / $0.3650 | Buy Now |
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Bristol Electronics | 191 |
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RFQ | ||
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Quest Components | POWER BIPOLAR TRANSISTOR, 5A I(C), 100V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-251AA, PLASTIC/EPOXY, 3 PIN | 38 |
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$0.4901 / $0.8169 | Buy Now |
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DISTI #
MJD122-1
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TME | Transistor: NPN, bipolar, Darlington, 100V, 5A, 20W, IPAK Min Qty: 1 | 0 |
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$0.4460 / $1.4100 | RFQ |
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DISTI #
MJD122-1
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IBS Electronics | MJD122-1 by ST MICROELECTRONICS is a NPN power transistor with a 100V collector-emitter voltage, 8A current rating, and 40W power dissipation, ideal for switching and amplifier applications. Min Qty: 3000 Package Multiple: 1 | 0 |
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$0.4690 / $0.5110 | Buy Now |
Part Details for MJD122-1
MJD122-1 CAD Models
MJD122-1 Part Data Attributes
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MJD122-1
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
MJD122-1
STMicroelectronics
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251AA, Plastic/Epoxy, 3 Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-251AA | |
| Package Description | To-251, Ipak-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Case Connection | Collector | |
| Collector Current-Max (IC) | 5 A | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | Darlington With Built-In Diode And Resistor | |
| DC Current Gain-Min (hFE) | 100 | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | In-Line | |
| Polarity/Channel Type | Npn | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for MJD122-1
This table gives cross-reference parts and alternative options found for MJD122-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD122-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| KSH122-I | Fairchild Semiconductor Corporation | Check for Price | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 | MJD122-1 vs KSH122-I |
MJD122-1 Frequently Asked Questions (FAQ)
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STMicroelectronics recommends a PCB layout with a large copper area connected to the tab of the device to ensure good thermal dissipation. A minimum of 2 oz copper thickness is recommended.
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The MJD122-1 requires a bias voltage of 5V to 15V, and a bias current of 1mA to 10mA. Ensure the bias circuit is designed to provide a stable voltage and current to the device.
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The maximum allowed power dissipation for the MJD122-1 is 2W. Ensure the device is operated within this limit to prevent overheating and damage.
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Handle the device with ESD-protective equipment, such as wrist straps and mats. Ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.
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The recommended storage temperature range for the MJD122-1 is -40°C to 125°C. Ensure the device is stored within this range to prevent damage.