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Part Details for MJD122G by onsemi
Overview of MJD122G by onsemi
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Motor control systems
Price & Stock for MJD122G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
42K1269
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Newark | Bipolar Transistor, Npn, 100V, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:100V, Power Dissipation Pd:1.75W, Dc Collector Current:8A, Rf Transistor Case:To-252 (Dpak), No. Of Pins:3Pins, Dc Current Gain Hfe:12Hfe Rohs Compliant: Yes |Onsemi MJD122G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 412 |
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$0.4170 / $0.9460 | Buy Now |
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DISTI #
MJD122G
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Avnet Americas | Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins - Rail/Tube (Alt: MJD122G) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube | 787 |
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$0.4228 / $0.4511 | Buy Now |
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DISTI #
42K1269
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Avnet Americas | Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins - Bulk (Alt: 42K1269) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks, 1 Days Container: Bulk | 604 Partner Stock |
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$0.5500 / $0.9460 | Buy Now |
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Bristol Electronics | Min Qty: 5 | 473 |
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$0.3600 / $1.1250 | Buy Now |
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DISTI #
MJD122G
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TME | Transistor: NPN, bipolar, Darlington, 100V, 8A, 1.75W, DPAK Min Qty: 1 | 7 |
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$0.5460 / $0.8500 | Buy Now |
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ComSIT USA | NPN DARLINGTON POWER TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATION Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin RoHS: Compliant |
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RFQ | |
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DISTI #
MJD122G
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Avnet Asia | Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins (Alt: MJD122G) RoHS: Compliant Min Qty: 1650 Package Multiple: 75 Lead time: 12 Weeks, 0 Days | 0 |
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$0.3691 / $0.4128 | Buy Now |
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DISTI #
MJD122G
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Avnet Silica | Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins (Alt: MJD122G) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 13 Weeks, 0 Days | Silica - 1800 |
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Buy Now | |
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DISTI #
C1S541900168488
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Chip1Stop | Trans Darlington NPN 100V 8A 1750mW Automotive 3-Pin(2+Tab) DPAK Tube Container: Tube | 48 |
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$0.7380 / $0.7680 | Buy Now |
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CHIPMALL.COM LIMITED | 100V 1000@4V,4A NPN 8A 20W TO-252-2DPAK Darlington Transistors ROHS | 810 |
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$0.4834 / $0.9180 | Buy Now |
Part Details for MJD122G
MJD122G CAD Models
MJD122G Part Data Attributes
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MJD122G
onsemi
Buy Now
Datasheet
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Compare Parts:
MJD122G
onsemi
8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
| Package Description | LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 15 Weeks, 1 Day | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 100 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 4 MHz |
Alternate Parts for MJD122G
This table gives cross-reference parts and alternative options found for MJD122G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD122G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MJD122 | Jiangsu Changjiang Electronics Technology Co Ltd | Check for Price | Power Bipolar Transistor | MJD122G vs MJD122 |