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Part Details for MJD122G by onsemi
Overview of MJD122G by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Motor control systems
Price & Stock for MJD122G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38K5595
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Newark | Transistor, Darlington, 100V, 8A, D-Pak, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:100V, Transition Frequency Ft:-, Power Dissipation Pd:1.75W, Dc Collector Current:8A, Dc Current Gain Hfe:2500Hfe, Transistor Case Rohs Compliant: Yes |Onsemi MJD122G Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1851 |
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$0.4170 / $0.8740 | Buy Now |
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DISTI #
42K1269
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Newark | Bipolar Transistor, Npn, 100V, Transistor Polarity:Npn, Collector Emitter Voltage V(Br)Ceo:100V, Power Dissipation Pd:1.75W, Dc Collector Current:8A, Rf Transistor Case:To-252 (Dpak), No. Of Pins:3Pins, Dc Current Gain Hfe:12Hfe Rohs Compliant: Yes |Onsemi MJD122G Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 417 |
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$0.4170 / $0.5710 | Buy Now |
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DISTI #
81AC9143
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Newark | Bip Dpak Npn 8A 100V Rohs Compliant: Yes |Onsemi MJD122G Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.3830 / $0.4580 | Buy Now |
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DISTI #
MJD122GOS-ND
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DigiKey | TRANS NPN DARL 100V 8A DPAK Min Qty: 1 Lead time: 12 Weeks Container: Tube |
5320 In Stock |
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$0.3929 / $1.0500 | Buy Now |
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DISTI #
MJD122G
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Avnet Americas | Trans Darlington NPN 100V 8A 3-Pin(2+Tab) DPAK Rail - Rail/Tube (Alt: MJD122G) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$0.3827 / $0.4580 | Buy Now |
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DISTI #
42K1269
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Avnet Americas | Trans Darlington NPN 100V 8A 3-Pin(2+Tab) DPAK Rail - Bulk (Alt: 42K1269) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks, 1 Days Container: Bulk | 417 Partner Stock |
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$0.4140 / $0.8530 | Buy Now |
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DISTI #
863-MJD122G
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Mouser Electronics | Darlington Transistors 8A 100V Bipolar Power NPN RoHS: Compliant | 1658 |
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$0.3920 / $0.8400 | Buy Now |
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Future Electronics | MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 612Tube |
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$0.3850 / $0.4650 | Buy Now |
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Future Electronics | MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2700 Package Multiple: 75 Container: Tube | 0Tube |
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$0.3850 / $0.4650 | Buy Now |
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Future Electronics | MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 61 Container: Tube | 0Tube |
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$0.3750 / $0.4500 | Buy Now |
Part Details for MJD122G
MJD122G CAD Models
MJD122G Part Data Attributes
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MJD122G
onsemi
Buy Now
Datasheet
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Compare Parts:
MJD122G
onsemi
8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
| Package Description | LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 62 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 100 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 4 MHz |
Alternate Parts for MJD122G
This table gives cross-reference parts and alternative options found for MJD122G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD122G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| KSH122 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | Samsung Semiconductor | MJD122G vs KSH122 |
| CJD122TR13 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Central Semiconductor Corp | MJD122G vs CJD122TR13 |
| MJD122-TP | Power Bipolar Transistor, Plastic/Epoxy, 2 Pin, DPAK-3 | Micro Commercial Components | MJD122G vs MJD122-TP |
| KSH122TF | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin, DPAK-3/2 | Fairchild Semiconductor Corporation | MJD122G vs KSH122TF |
| KSH122TF_NL | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | MJD122G vs KSH122TF_NL |
| MJD122-T1 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | Samsung Semiconductor | MJD122G vs MJD122-T1 |
| CJD122BK | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Central Semiconductor Corp | MJD122G vs CJD122BK |
| KSH122TM | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin, DPAK-3/2 | Fairchild Semiconductor Corporation | MJD122G vs KSH122TM |
| MJD122 | Power Bipolar Transistor | WEITRON INTERNATIONAL CO., LTD. | MJD122G vs MJD122 |
| MJD122T4 | Low voltage NPN power Darlington transistor | STMicroelectronics | MJD122G vs MJD122T4 |