Datasheets
MJD122T4G by: onsemi

8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

Part Details for MJD122T4G by onsemi

Results Overview of MJD122T4G by onsemi

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Applications Industrial Automation Energy and Power Systems Transportation and Logistics Renewable Energy Automotive Motor control systems

MJD122T4G Information

MJD122T4G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MJD122T4G

Part # Distributor Description Stock Price Buy
DISTI # 10N9469
Newark Darlington Transistor, Npn, 100V, D-Pak, Transistor Polarity:Npn, No. Of Pins:3Pins, Transistor Mounting:Surface Mount, Operating Temperature Max:150°C, Product Range:-, Qualification:-, Collector Emitter Voltage Max:100V Rohs Compliant: Yes |Onsemi MJD122T4G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 5000
  • 1 $0.2930
  • 10 $0.2930
  • 25 $0.2930
  • 50 $0.2930
  • 100 $0.2930
  • 250 $0.2930
$0.2930 Buy Now
DISTI # 31Y2620
Newark Bipolar (Bjt) Single Transistor, Darlington, Npn, 100 V, 4 Mhz, 20 W, 8 A, 1000 Rohs Compliant: Yes |Onsemi MJD122T4G RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 2,500 $0.4260
  • 5,000 $0.4150
  • 10,000 $0.4030
  • 15,000 $0.3890
  • 25,000 $0.3860
$0.3860 / $0.4260 Buy Now
DISTI # MJD122T4G
Avnet Americas Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins - Tape and Reel (Alt: MJD122T4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel 62500
  • 2,500 $0.3110
$0.3110 Buy Now
DISTI # 10N9469
Avnet Americas Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins - Product that comes on tape, but is not reeled (Alt: 10N9469) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 36 Weeks, 1 Days Container: Ammo Pack 5000 Partner Stock
  • 1 $1.0000
  • 10 $0.8330
  • 25 $0.7600
  • 50 $0.6870
  • 100 $0.6150
$0.6150 / $1.0000 Buy Now
Bristol Electronics   2207
RFQ
Bristol Electronics   4
RFQ
DISTI # MJD122T4G
TME Transistor: NPN, bipolar, Darlington, 100V, 8A, 1.75W, DPAK Min Qty: 1 1567
  • 1 $0.8390
  • 10 $0.7010
  • 100 $0.5140
  • 400 $0.4250
  • 500 $0.4130
  • 1,000 $0.3800
  • 2,500 $0.3750
$0.3750 / $0.8390 Buy Now
Ameya Holding Limited MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3 3739
RFQ
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 809
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # MJD122T4G
IBS Electronics Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin Min Qty: 120 Package Multiple: 1 120
  • 120 $0.7974
$0.7974 Buy Now
NexGen Digital   9
RFQ
Chip 1 Exchange INSTOCK 35822
RFQ
DISTI # MJD122T4G
Avnet Asia Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins (Alt: MJD122T4G) RoHS: Compliant Min Qty: 5000 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days 0
  • 5,000 $0.3554
  • 10,000 $0.3317
  • 15,000 $0.3231
  • 25,000 $0.3149
  • 50,000 $0.3072
  • 125,000 $0.2998
  • 250,000 $0.2927
$0.2927 / $0.3554 Buy Now
DISTI # MJD122T4G
Avnet Silica Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins (Alt: MJD122T4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks, 0 Days Silica - 5000
Buy Now
Chip-Germany GmbH   RoHS: Not Compliant 430
RFQ
CHIPMALL.COM LIMITED 100V 1000@4V,4A NPN 8A 1.75W TO-252-2DPAK Darlington Transistors ROHS 5451
  • 1 $0.4900
  • 10 $0.4046
  • 30 $0.3627
  • 100 $0.3207
  • 500 $0.2818
  • 1,000 $0.2698
$0.2698 / $0.4900 Buy Now
DISTI # MJD122T4G
EBV Elektronik Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins (Alt: MJD122T4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days EBV - 0
Buy Now
LCSC 100V 10004V4A NPN 8A 1.75W TO-252-2(DPAK) Darlington Transistors ROHS 6496
  • 1 $0.4849
  • 10 $0.4005
  • 30 $0.3590
  • 100 $0.3174
  • 500 $0.2789
  • 1,000 $0.2670
$0.2670 / $0.4849 Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 12890
  • 10 $0.7000
  • 100 $0.3800
  • 500 $0.3300
$0.3300 / $0.7000 Buy Now
Win Source Electronics TRANS NPN DARL 100V 8A DPAK 74999
  • 165 $0.3056
  • 350 $0.2859
  • 545 $0.2761
  • 785 $0.2564
  • 1,015 $0.2465
  • 1,270 $0.2366
$0.2366 / $0.3056 Buy Now

Part Details for MJD122T4G

MJD122T4G CAD Models

MJD122T4G Part Data Attributes

MJD122T4G onsemi
Buy Now Datasheet
Compare Parts:
MJD122T4G onsemi 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DPAK (SINGLE GAUGE) TO-252
Package Description LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3
Pin Count 3
Manufacturer Package Code 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 36 Weeks, 1 Day
Samacsys Manufacturer onsemi
Case Connection COLLECTOR
Collector Current-Max (IC) 8 A
Collector-Emitter Voltage-Max 100 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 100
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 4 MHz

MJD122T4G Related Parts

MJD122T4G Frequently Asked Questions (FAQ)

  • The MJD122T4G can operate from -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.

  • The MJD122T4G requires a bias voltage of 5V to 12V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and noise-free for optimal performance.

  • The maximum power dissipation for the MJD122T4G is 1.5W. Ensure proper heat sinking and thermal management to prevent overheating.

  • Yes, the MJD122T4G can be used in switching applications, but ensure the switching frequency is within the recommended range of 100kHz to 1MHz, and the device is properly biased and heat-sunk.

  • Handle the MJD122T4G with ESD-safe materials, and ensure the device is properly grounded during handling and assembly. Use ESD protection devices, such as TVS diodes, if necessary.

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