-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for MJD122T4G by onsemi
Overview of MJD122T4G by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Motor control systems
Price & Stock for MJD122T4G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
90W4487
|
Newark | Bipolar (Bjt) Single Transistor, Darlington, Npn, 100 V, 4 Mhz, 20 W, 8 A, 1000 Rohs Compliant: Yes |Onsemi MJD122T4G Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 11069 |
|
$0.4820 / $1.0300 | Buy Now |
|
DISTI #
10N9469
|
Newark | Darlington Transistor, Npn, 100V, D-Pak, Transistor Polarity:Npn, No. Of Pins:3Pins, Transistor Mounting:Surface Mount, Operating Temperature Max:150°C, Product Range:-, Qualification:-, Collector Emitter Voltage Max:100V Rohs Compliant: Yes |Onsemi MJD122T4G Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.4440 / $0.9930 | Buy Now |
|
DISTI #
31Y2620
|
Newark | Bipolar (Bjt) Single Transistor, Darlington, Npn, 100 V, 4 Mhz, 20 W, 8 A, 1000 Rohs Compliant: Yes |Onsemi MJD122T4G Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.3880 / $0.4270 | Buy Now |
|
DISTI #
MJD122T4GOSCT-ND
|
DigiKey | TRANS NPN DARL 100V 8A DPAK Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1333 In Stock |
|
$0.3110 / $0.9400 | Buy Now |
|
DISTI #
MJD122T4G
|
Avnet Americas | Trans Darlington NPN 100V 8A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: MJD122T4G) RoHS: Compliant Min Qty: 20000 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel | 25000 |
|
$0.3085 / $0.3682 | Buy Now |
|
DISTI #
863-MJD122T4G
|
Mouser Electronics | Darlington Transistors 8A 100V Bipolar Power NPN RoHS: Compliant | 0 |
|
$0.3560 / $0.9300 | Order Now |
|
|
Future Electronics | MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 115000Reel |
|
$0.3100 / $0.3200 | Buy Now |
|
|
Future Electronics | MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.3000 / $0.3150 | Buy Now |
|
|
Bristol Electronics | 2207 |
|
RFQ | ||
|
|
Bristol Electronics | 430 |
|
RFQ |
Part Details for MJD122T4G
MJD122T4G CAD Models
MJD122T4G Part Data Attributes
|
|
MJD122T4G
onsemi
Buy Now
Datasheet
|
Compare Parts:
MJD122T4G
onsemi
8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
| Package Description | LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 58 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 100 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 100 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 20 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 4 MHz |
Alternate Parts for MJD122T4G
This table gives cross-reference parts and alternative options found for MJD122T4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MJD122T4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| KSH122 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | Samsung Semiconductor | MJD122T4G vs KSH122 |
| CJD122TR13 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Central Semiconductor Corp | MJD122T4G vs CJD122TR13 |
| MJD122-TP | Power Bipolar Transistor, Plastic/Epoxy, 2 Pin, DPAK-3 | Micro Commercial Components | MJD122T4G vs MJD122-TP |
| KSH122TF | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin, DPAK-3/2 | Fairchild Semiconductor Corporation | MJD122T4G vs KSH122TF |
| KSH122TF_NL | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | MJD122T4G vs KSH122TF_NL |
| MJD122-T1 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | Samsung Semiconductor | MJD122T4G vs MJD122-T1 |
| CJD122BK | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Central Semiconductor Corp | MJD122T4G vs CJD122BK |
| KSH122TM | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin, DPAK-3/2 | Fairchild Semiconductor Corporation | MJD122T4G vs KSH122TM |
| MJD122 | Power Bipolar Transistor | WEITRON INTERNATIONAL CO., LTD. | MJD122T4G vs MJD122 |
| MJD122T4 | Low voltage NPN power Darlington transistor | STMicroelectronics | MJD122T4G vs MJD122T4 |