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8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MJD122T4G by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
10N9469
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Newark | Darlington Transistor, Npn, 100V, D-Pak, Transistor Polarity:Npn, No. Of Pins:3Pins, Transistor Mounting:Surface Mount, Operating Temperature Max:150°C, Product Range:-, Qualification:-, Collector Emitter Voltage Max:100V Rohs Compliant: Yes |Onsemi MJD122T4G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 5000 |
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$0.2930 | Buy Now |
DISTI #
31Y2620
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Newark | Bipolar (Bjt) Single Transistor, Darlington, Npn, 100 V, 4 Mhz, 20 W, 8 A, 1000 Rohs Compliant: Yes |Onsemi MJD122T4G RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.3860 / $0.4260 | Buy Now |
DISTI #
MJD122T4G
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Avnet Americas | Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins - Tape and Reel (Alt: MJD122T4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel | 62500 |
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$0.3110 | Buy Now |
DISTI #
10N9469
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Avnet Americas | Darlington Transistor, Dual NPN, 100 V, 8 A, 20 W, 1000 hFE, TO-252 (DPAK), 3 Pins - Product that comes on tape, but is not reeled (Alt: 10N9469) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 36 Weeks, 1 Days Container: Ammo Pack | 5000 Partner Stock |
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$0.6150 / $1.0000 | Buy Now |
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Bristol Electronics | 2207 |
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RFQ | ||
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Bristol Electronics | 4 |
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RFQ | ||
DISTI #
MJD122T4G
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TME | Transistor: NPN, bipolar, Darlington, 100V, 8A, 1.75W, DPAK Min Qty: 1 | 1567 |
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$0.3750 / $0.8390 | Buy Now |
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Ameya Holding Limited | MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3 | 3739 |
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RFQ | |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ | |
DISTI #
MJD122T4G
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IBS Electronics | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin Min Qty: 120 Package Multiple: 1 | 120 |
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$0.7974 | Buy Now |
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MJD122T4G
onsemi
Buy Now
Datasheet
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Compare Parts:
MJD122T4G
onsemi
8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
Package Description | LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | 369C | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 36 Weeks, 1 Day | |
Samacsys Manufacturer | onsemi | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 8 A | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
DC Current Gain-Min (hFE) | 100 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 20 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 4 MHz |