Datasheets
MQSMBJP6KE68CATR by: Microsemi Corporation

Trans Voltage Suppressor Diode, 600W, 58.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN

Part Details for MQSMBJP6KE68CATR by Microsemi Corporation

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Part Details for MQSMBJP6KE68CATR

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MQSMBJP6KE68CATR Part Data Attributes:

MQSMBJP6KE68CATR Microsemi Corporation
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MQSMBJP6KE68CATR Microsemi Corporation Trans Voltage Suppressor Diode, 600W, 58.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature TR, 7 INCH: 750
Breakdown Voltage-Max 71.4 V
Breakdown Voltage-Min 64.6 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e0
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity BIDIRECTIONAL
Power Dissipation-Max 1.38 W
Qualification Status Not Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 58.1 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish TIN LEAD
Terminal Form C BEND
Terminal Position DUAL

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