Part Details for MT41K64M16JT-15E:G by Micron Technology Inc
Overview of MT41K64M16JT-15E:G by Micron Technology Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Price & Stock for MT41K64M16JT-15E:G
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 20 |
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RFQ | ||
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Quest Components | 647 |
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$7.7430 / $11.6145 | Buy Now |
Part Details for MT41K64M16JT-15E:G
MT41K64M16JT-15E:G CAD Models
MT41K64M16JT-15E:G Part Data Attributes
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MT41K64M16JT-15E:G
Micron Technology Inc
Buy Now
Datasheet
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MT41K64M16JT-15E:G
Micron Technology Inc
DDR DRAM, 64MX16, 0.255ns, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Part Package Code | BGA | |
Package Description | 8 X 14 MM, LEAD FREE, FBGA-96 | |
Pin Count | 96 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.32 | |
Access Mode | MULTI BANK PAGE BURST | |
Access Time-Max | 0.255 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 667 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 8 | |
JESD-30 Code | R-PBGA-B96 | |
JESD-609 Code | e1 | |
Length | 14 mm | |
Memory Density | 1073741824 bit | |
Memory IC Type | DDR3L DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 96 | |
Number of Words | 67108864 words | |
Number of Words Code | 64000000 | |
Operating Mode | SYNCHRONOUS | |
Organization | 64MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA96,9X16,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 8 | |
Standby Current-Max | 0.012 A | |
Supply Current-Max | 0.275 mA | |
Supply Voltage-Max (Vsup) | 1.45 V | |
Supply Voltage-Min (Vsup) | 1.283 V | |
Supply Voltage-Nom (Vsup) | 1.35 V | |
Surface Mount | YES | |
Technology | CMOS | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 8 mm |
Alternate Parts for MT41K64M16JT-15E:G
This table gives cross-reference parts and alternative options found for MT41K64M16JT-15E:G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT41K64M16JT-15E:G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
EDJ1116BABG-AG-E | DDR DRAM, 64MX16, 0.3ns, CMOS, PBGA96, ROHS COMPLIANT, FBGA-96 | Elpida Memory Inc | MT41K64M16JT-15E:G vs EDJ1116BABG-AG-E |
K4W1G1646G-BC080 | DDR DRAM, 64MX16, 20ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Samsung Semiconductor | MT41K64M16JT-15E:G vs K4W1G1646G-BC080 |
K4B1G1646G-BCF80 | DDR DRAM, 64MX16, 0.3ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Samsung Semiconductor | MT41K64M16JT-15E:G vs K4B1G1646G-BCF80 |
EDJ1116BABG-8A-E | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA96, ROHS COMPLIANT, FBGA-96 | Elpida Memory Inc | MT41K64M16JT-15E:G vs EDJ1116BABG-8A-E |
IDSH1G-04A1F1C-10F | DDR DRAM, 64MX16, 20ns, CMOS, PBGA96, 0.80 MM PITCH, GREEN, PLASTIC, TFBGA-96 | Qimonda AG | MT41K64M16JT-15E:G vs IDSH1G-04A1F1C-10F |
K4W1G1646E-HC190 | DDR DRAM, 64MX16, 0.3ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | Samsung Semiconductor | MT41K64M16JT-15E:G vs K4W1G1646E-HC190 |
IDSH1G-04A1F1C-08D | DDR DRAM, 64MX16, 20ns, CMOS, PBGA96, 0.80 MM PITCH, GREEN, PLASTIC, TFBGA-96 | Qimonda AG | MT41K64M16JT-15E:G vs IDSH1G-04A1F1C-08D |
H5TQ1G63DFR-11C | DDR DRAM, 64MX16, 20ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | SK Hynix Inc | MT41K64M16JT-15E:G vs H5TQ1G63DFR-11C |
NT5CB64M16AP-DH | DDR DRAM, 64MX16, 20ns, CMOS, PBGA96, 0.80 MM PITCH, ROHS COMPLIANT, WBGA-96 | Nanya Technology Corporation | MT41K64M16JT-15E:G vs NT5CB64M16AP-DH |
EDJ1116BABG-8C-E | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA96, ROHS COMPLIANT, FBGA-96 | Elpida Memory Inc | MT41K64M16JT-15E:G vs EDJ1116BABG-8C-E |