Part Details for MT47H128M8CF-3IT:H by Micron Technology Inc
Overview of MT47H128M8CF-3IT:H by Micron Technology Inc
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MT47H128M8CF-3IT:H
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 128M X 8 DDR DRAM, 0.45 ns, PBGA60 | 672 |
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$6.7500 / $13.5000 | Buy Now |
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Quest Components | 128M X 8 DDR DRAM, 0.45 ns, PBGA60 | 17 |
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$9.0000 / $13.5000 | Buy Now |
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Quest Components | 128M X 8 DDR DRAM, 0.45 ns, PBGA60 | 9 |
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$9.9000 / $14.8500 | Buy Now |
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Sense Electronic Company Limited | BGA@ | 3559 |
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RFQ |
Part Details for MT47H128M8CF-3IT:H
MT47H128M8CF-3IT:H CAD Models
MT47H128M8CF-3IT:H Part Data Attributes
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MT47H128M8CF-3IT:H
Micron Technology Inc
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Datasheet
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MT47H128M8CF-3IT:H
Micron Technology Inc
DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA60,9X11,32 | |
| Pin Count | 60 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 333 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B60 | |
| JESD-609 Code | e1 | |
| Length | 10 mm | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 128MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA60,9X11,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Supply Current-Max | 0.185 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 8 mm |
Alternate Parts for MT47H128M8CF-3IT:H
This table gives cross-reference parts and alternative options found for MT47H128M8CF-3IT:H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H128M8CF-3IT:H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HYB18T1G800CF-3S | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 | Qimonda AG | MT47H128M8CF-3IT:H vs HYB18T1G800CF-3S |
| MT47H128M8HQ-3:G | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | MT47H128M8CF-3IT:H vs MT47H128M8HQ-3:G |
| MT47H128M8HQ-3:E | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | MT47H128M8CF-3IT:H vs MT47H128M8HQ-3:E |
| MT47H128M8HQ-3EAT:E | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | MT47H128M8CF-3IT:H vs MT47H128M8HQ-3EAT:E |
| MT47H128M8HV-3EAT:G | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 | Micron Technology Inc | MT47H128M8CF-3IT:H vs MT47H128M8HV-3EAT:G |
| MT47H128M8HV-3EL:G | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 | Micron Technology Inc | MT47H128M8CF-3IT:H vs MT47H128M8HV-3EL:G |
| IS43DR81280A-3DBL | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, 8 X 13.65 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-60 | Integrated Silicon Solution Inc | MT47H128M8CF-3IT:H vs IS43DR81280A-3DBL |
| MT47H128M8HQ-3AT:E | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 | Micron Technology Inc | MT47H128M8CF-3IT:H vs MT47H128M8HQ-3AT:E |
| MT47H128M8HV-3ELIT:G | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 | Micron Technology Inc | MT47H128M8CF-3IT:H vs MT47H128M8HV-3ELIT:G |
| MT47H128M8HV-3LIT:E | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 | Micron Technology Inc | MT47H128M8CF-3IT:H vs MT47H128M8HV-3LIT:E |