Datasheets
MT47H32M16CC-37E:B by:

DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, 12 X 12.50 MM, ROHS COMPLIANT, FBGA-84

Part Details for MT47H32M16CC-37E:B by Micron Technology Inc

Overview of MT47H32M16CC-37E:B by Micron Technology Inc

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Price & Stock for MT47H32M16CC-37E:B

Part # Distributor Description Stock Price Buy
Quest Components SDRAM, DDR, 32M x 16, 84 Pin, Plastic, BGA 4
  • 1 $14.8560
  • 2 $12.3800
  • 3 $10.8944
$10.8944 / $14.8560 Buy Now

Part Details for MT47H32M16CC-37E:B

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MT47H32M16CC-37E:B Part Data Attributes

MT47H32M16CC-37E:B Micron Technology Inc
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MT47H32M16CC-37E:B Micron Technology Inc DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, 12 X 12.50 MM, ROHS COMPLIANT, FBGA-84
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description TFBGA, BGA84,9X15,32
Pin Count 84
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Samacsys Manufacturer Micron
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 266 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84
JESD-609 Code e1
Length 12.5 mm
Memory Density 536870912 bit
Memory IC Type DDR2 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.007 A
Supply Current-Max 0.34 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Width 12 mm

Alternate Parts for MT47H32M16CC-37E:B

This table gives cross-reference parts and alternative options found for MT47H32M16CC-37E:B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H32M16CC-37E:B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT47H32M16HW-37E:F DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 Micron Technology Inc MT47H32M16CC-37E:B vs MT47H32M16HW-37E:F
MT47H32M16HW-37EL:F DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 Micron Technology Inc MT47H32M16CC-37E:B vs MT47H32M16HW-37EL:F
MT47H32M16GC-37E:B DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, 12 X 12.50 MM, FBGA-84 Micron Technology Inc MT47H32M16CC-37E:B vs MT47H32M16GC-37E:B
MT47H32M16GC-37EL:B DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, 12 X 12.50 MM, FBGA-84 Micron Technology Inc MT47H32M16CC-37E:B vs MT47H32M16GC-37EL:B
MT47H32M16BN-37E:D DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, 10 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H32M16CC-37E:B vs MT47H32M16BN-37E:D
MT47H32M16FN-37EL:D DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, 10 X 12.50 MM, FBGA-84 Micron Technology Inc MT47H32M16CC-37E:B vs MT47H32M16FN-37EL:D
MT47H32M16CC-37EL:B DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, 12 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H32M16CC-37E:B vs MT47H32M16CC-37EL:B
MT47H32M16HR-37E:F DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, 8 X 10 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H32M16CC-37E:B vs MT47H32M16HR-37E:F
Part Number Description Manufacturer Compare
K4T51163QG-HLD50 DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 Samsung Semiconductor MT47H32M16CC-37E:B vs K4T51163QG-HLD50
MT47H32M16GC-5ELIT:B DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA84, 12 X 12.50 MM, FBGA-84 Micron Technology Inc MT47H32M16CC-37E:B vs MT47H32M16GC-5ELIT:B
K4T51163QM-GLD5 DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor MT47H32M16CC-37E:B vs K4T51163QM-GLD5
V59C1512164QAF-5 DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA84, ROHS COMPLIANT, MO-207, FBGA-84 ProMOS Technologies Inc MT47H32M16CC-37E:B vs V59C1512164QAF-5
V59C1512164QDUJ5E DDR DRAM, 32MX16, CMOS, PBGA84, GREEN, MO-207, FBGA-84 ProMOS Technologies Inc MT47H32M16CC-37E:B vs V59C1512164QDUJ5E
V59C1512164QDLJ5H DDR DRAM, 32MX16, CMOS, PBGA84, GREEN, MO-207, FBGA-84 ProMOS Technologies Inc MT47H32M16CC-37E:B vs V59C1512164QDLJ5H
HY5PS121621CLFP-E3I DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 SK Hynix Inc MT47H32M16CC-37E:B vs HY5PS121621CLFP-E3I
HY5PS121621CFP-C4 DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 SK Hynix Inc MT47H32M16CC-37E:B vs HY5PS121621CFP-C4
HY5PS121621BFP-22 DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, LEAD FREE, FBGA-84 SK Hynix Inc MT47H32M16CC-37E:B vs HY5PS121621BFP-22
K4T51163QG-HID50 DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 Samsung Semiconductor MT47H32M16CC-37E:B vs K4T51163QG-HID50

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