Part Details for MT47H64M16HR-3 IT:H by Micron Technology Inc
Overview of MT47H64M16HR-3 IT:H by Micron Technology Inc
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MT47H64M16HR-3 IT:H
| Part # | Distributor | Description | Stock | Price | Buy | |
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Velocity Electronics | Our Stock | 18 |
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Chip1Cloud | DDR2-667 64Mx16 Ind | 7600 |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 21 |
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$12.5000 / $19.2300 | Buy Now |
Part Details for MT47H64M16HR-3 IT:H
MT47H64M16HR-3 IT:H CAD Models
MT47H64M16HR-3 IT:H Part Data Attributes:
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MT47H64M16HR-3 IT:H
Micron Technology Inc
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Datasheet
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MT47H64M16HR-3 IT:H
Micron Technology Inc
IC 64M X 16 DDR DRAM, 0.45 ns, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84, Dynamic RAM
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Package Description | TFBGA, BGA84,9X15,32 | |
| Reach Compliance Code | unknown | |
| ECCN Code | 3A991 | |
| HTS Code | 8542.32.00.32 | |
| Samacsys Manufacturer | Micron | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 333 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B84 | |
| JESD-609 Code | e1 | |
| Length | 12.5 mm | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 84 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 64MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA84,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 0.007 A | |
| Supply Current-Max | 0.23 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Width | 8 mm |
Alternate Parts for MT47H64M16HR-3 IT:H
This table gives cross-reference parts and alternative options found for MT47H64M16HR-3 IT:H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H64M16HR-3 IT:H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT47H64M16HR-3AAT | DDR DRAM, | Micron Technology Inc | MT47H64M16HR-3 IT:H vs MT47H64M16HR-3AAT |
| MT47H64M16HR-3IT:HTR | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | MT47H64M16HR-3 IT:H vs MT47H64M16HR-3IT:HTR |
| K4T1G164QE-HIPE6 | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | Samsung Semiconductor | MT47H64M16HR-3 IT:H vs K4T1G164QE-HIPE6 |
| MT47H64M16HR-3AT:H | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | MT47H64M16HR-3 IT:H vs MT47H64M16HR-3AT:H |
| MT47H64M16HW-3AT:E | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 | Micron Technology Inc | MT47H64M16HR-3 IT:H vs MT47H64M16HW-3AT:E |
| MT47H64M16HR-3:GTR | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | MT47H64M16HR-3 IT:H vs MT47H64M16HR-3:GTR |
| EDE1116AGBG-6E-F | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | Elpida Memory Inc | MT47H64M16HR-3 IT:H vs EDE1116AGBG-6E-F |
| MT47H64M16HR-3:H | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | MT47H64M16HR-3 IT:H vs MT47H64M16HR-3:H |
| MT47H64M16HW-3IT | DDR DRAM, | Micron Technology Inc | MT47H64M16HR-3 IT:H vs MT47H64M16HW-3IT |
| MT47H64M16HR-3IT:H | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Micron Technology Inc | MT47H64M16HR-3 IT:H vs MT47H64M16HR-3IT:H |