Part Details for MT48H8M32LFB5-6IT:H by Micron Technology Inc
Overview of MT48H8M32LFB5-6IT:H by Micron Technology Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MT48H8M32LFB5-6IT:H
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | SYNCHRONOUS DRAM | 2 |
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$8.0000 / $12.0000 | Buy Now |
Part Details for MT48H8M32LFB5-6IT:H
MT48H8M32LFB5-6IT:H CAD Models
MT48H8M32LFB5-6IT:H Part Data Attributes:
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MT48H8M32LFB5-6IT:H
Micron Technology Inc
Buy Now
Datasheet
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MT48H8M32LFB5-6IT:H
Micron Technology Inc
Synchronous DRAM, 8MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, GREEN, VFBGA-90
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Package Description | VFBGA, BGA90,9X15,32 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PBGA-B90 | |
| Length | 8 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 90 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 8MX32 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | VFBGA | |
| Package Equivalence Code | BGA90,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.00001 A | |
| Supply Current-Max | 0.1 mA | |
| Supply Voltage-Max (Vsup) | 1.95 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 13 mm |
Alternate Parts for MT48H8M32LFB5-6IT:H
This table gives cross-reference parts and alternative options found for MT48H8M32LFB5-6IT:H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT48H8M32LFB5-6IT:H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| EDS2532AABH-1AR2-E | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Elpida Memory Inc | MT48H8M32LFB5-6IT:H vs EDS2532AABH-1AR2-E |
| K4S283233F-HC1L0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | MT48H8M32LFB5-6IT:H vs K4S283233F-HC1L0 |
| EDS2732AABH-75L-E | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Elpida Memory Inc | MT48H8M32LFB5-6IT:H vs EDS2732AABH-75L-E |
| K4S283233E-DC1L0 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 11 X 13 MM, LEAD FREE, FBGA-90 | Samsung Semiconductor | MT48H8M32LFB5-6IT:H vs K4S283233E-DC1L0 |
| K4X56323PI-7EC60 | DDR DRAM, 8MX32, 5.5ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | Samsung Semiconductor | MT48H8M32LFB5-6IT:H vs K4X56323PI-7EC60 |
| K4S56323LF-FL750 | Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | MT48H8M32LFB5-6IT:H vs K4S56323LF-FL750 |
| K4S28323LE-HL750 | Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 | Samsung Semiconductor | MT48H8M32LFB5-6IT:H vs K4S28323LE-HL750 |
| K4M28323PH-FF900 | Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90 | Samsung Semiconductor | MT48H8M32LFB5-6IT:H vs K4M28323PH-FF900 |
| IS42S32800G-75EBLI | Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, TFBGA-90 | Integrated Silicon Solution Inc | MT48H8M32LFB5-6IT:H vs IS42S32800G-75EBLI |
| HY57W2A3220T-B | Synchronous DRAM, 4MX32, 9ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | SK Hynix Inc | MT48H8M32LFB5-6IT:H vs HY57W2A3220T-B |