Memory
MT48LC8M16A2P-75IT:G
Description: Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54

Overview of MT48LC8M16A2P-75IT:G by Micron Technology Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Available Datasheets

Part # Manufacturer Description Datasheet
LT1175IT#PBF Analog Devices 500mA Neg L Drop uP Reg
LT1175IT-5#PBF Analog Devices 500mA Neg L Drop uP Reg

Price & Stock for MT48LC8M16A2P-75IT:G by Micron Technology Inc

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   198
RFQ
Quest Components 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, 54 Pin Plastic SMT 2013
  • 1 $22.0883
  • 117 $15.7072
  • 256 $14.7255
$14.7255 / $22.0883 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1 39
  • 1 $14.0000
$14.0000 Buy Now

CAD Models for MT48LC8M16A2P-75IT:G by Micron Technology Inc
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Part Data Attributes for MT48LC8M16A2P-75IT:G by Micron Technology Inc

MT48LC8M16A2P-75IT:G
Micron Technology Inc
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICRON TECHNOLOGY INC
Part Package Code
TSOP2
Package Description
TSOP2, TSOP54,.46,32
Pin Count
54
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Samacsys Manufacturer
Micron
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
5.4 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
133 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PDSO-G54
JESD-609 Code
e3
Length
22.22 mm
Memory Density
134217728 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
54
Number of Words
8388608 words
Number of Words Code
8000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
8MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Equivalence Code
TSOP54,.46,32
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Refresh Cycles
4096
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.002 A
Supply Current-Max
0.31 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Pitch
0.8 mm
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Width
10.16 mm
Want to compare parts?
  1. MT48LC8M16A2P-75IT:G
    Micron Technology Inc
    Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
    VS

Alternate Parts for MT48LC8M16A2P-75IT:G

This table gives cross-reference parts and alternative options found for MT48LC8M16A2P-75IT:G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT48LC8M16A2P-75IT:G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
AS4SD8M16DG-75/IT Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micross Components MT48LC8M16A2P-75IT:G vs AS4SD8M16DG-75/IT
K4S281632K-UI75 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 Samsung Semiconductor MT48LC8M16A2P-75IT:G vs K4S281632K-UI75
K4S281632K-UI750 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, ROHS COMPLIANT, TSSOP2-54 Samsung Semiconductor MT48LC8M16A2P-75IT:G vs K4S281632K-UI750
MT48LC8M16A2TG-75IT Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc MT48LC8M16A2P-75IT:G vs MT48LC8M16A2TG-75IT
Part Number Description Manufacturer Compare
VG36128401ATL-7L-P Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 Vanguard International Semiconductor Corporation MT48LC8M16A2P-75IT:G vs VG36128401ATL-7L-P
V54C3128404VCI7EPC Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 ProMOS Technologies Inc MT48LC8M16A2P-75IT:G vs V54C3128404VCI7EPC
V55C2128164VCLI7I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 ProMOS Technologies Inc MT48LC8M16A2P-75IT:G vs V55C2128164VCLI7I
V54C3128404VCI7E Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 ProMOS Technologies Inc MT48LC8M16A2P-75IT:G vs V54C3128404VCI7E
IS42SM16800E-5TLI Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc MT48LC8M16A2P-75IT:G vs IS42SM16800E-5TLI
HY57V281620BT-S Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54 SK Hynix Inc MT48LC8M16A2P-75IT:G vs HY57V281620BT-S
V54C3128164VCI7IPC Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 ProMOS Technologies Inc MT48LC8M16A2P-75IT:G vs V54C3128164VCI7IPC
K4S281632C-TC750 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor MT48LC8M16A2P-75IT:G vs K4S281632C-TC750
TC59SM716ASL-80 IC 8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.40 MM PITCH. PLASTIC, TSOP2-54, Dynamic RAM Toshiba America Electronic Components MT48LC8M16A2P-75IT:G vs TC59SM716ASL-80
W981216AH-75 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 Winbond Electronics Corp MT48LC8M16A2P-75IT:G vs W981216AH-75

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