Part Details for MT4LSDT464HG-10EC3 by Micron Technology Inc
Overview of MT4LSDT464HG-10EC3 by Micron Technology Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MT4LSDT464HG-10EC3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Quest Components | SDRAM Memory Module, 4M x 64, 144 Pin, Plastic, DIMM Package | 54 |
|
$33.3200 / $39.2000 | Buy Now |
Part Details for MT4LSDT464HG-10EC3
MT4LSDT464HG-10EC3 CAD Models
MT4LSDT464HG-10EC3 Part Data Attributes
|
|
MT4LSDT464HG-10EC3
Micron Technology Inc
Buy Now
Datasheet
|
Compare Parts:
MT4LSDT464HG-10EC3
Micron Technology Inc
Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-144
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | SODIMM | |
| Package Description | SODIMM-144 | |
| Pin Count | 144 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 125 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XZMA-N144 | |
| JESD-609 Code | e0 | |
| Memory Density | 268435456 bit | |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 144 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM144,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 25.4 mm | |
| Self Refresh | YES | |
| Standby Current-Max | 0.008 A | |
| Supply Current-Max | 0.76 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | ZIG-ZAG |
Alternate Parts for MT4LSDT464HG-10EC3
This table gives cross-reference parts and alternative options found for MT4LSDT464HG-10EC3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT4LSDT464HG-10EC3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HYM7V65401BLTQG-8 | Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-144 | SK Hynix Inc | MT4LSDT464HG-10EC3 vs HYM7V65401BLTQG-8 |
| WED3DG644V7D1-M | Synchronous DRAM Module, 4MX64, CMOS, SODIMM-144 | Microsemi Corporation | MT4LSDT464HG-10EC3 vs WED3DG644V7D1-M |
| STI644004G1-60GG | EDO DRAM Module, 4MX64, 60ns, CMOS, DIMM-144 | Simple Tech Inc | MT4LSDT464HG-10EC3 vs STI644004G1-60GG |
| HYM5V64404ATP-80 | EDO DRAM Module, 4MX64, CMOS, SODIMM-144 | SK Hynix Inc | MT4LSDT464HG-10EC3 vs HYM5V64404ATP-80 |
| STI644004G1-60LVGG | EDO DRAM Module, 4MX64, 60ns, CMOS, DIMM-144 | Simple Tech Inc | MT4LSDT464HG-10EC3 vs STI644004G1-60LVGG |
| HB526R464DBK10 | Synchronous DRAM Module, 4MX64, 7.5ns, CMOS, SODIMM-144 | Hitachi Ltd | MT4LSDT464HG-10EC3 vs HB526R464DBK10 |
| M466F0404BT2-L50 | EDO DRAM Module, 4MX64, 50ns, CMOS, SODIMM-144 | Samsung Semiconductor | MT4LSDT464HG-10EC3 vs M466F0404BT2-L50 |
| HB56SW464DB-6B | EDO DRAM Module, 4MX64, 60ns, MOS, DIMM-144 | Hitachi Ltd | MT4LSDT464HG-10EC3 vs HB56SW464DB-6B |
| STI644004G1-60GH | EDO DRAM Module, 4MX64, 60ns, CMOS, DIMM-144 | Simple Tech Inc | MT4LSDT464HG-10EC3 vs STI644004G1-60GH |
| HYM5V64404ATK-60 | EDO DRAM Module, 4MX64, CMOS, SODIMM-144 | SK Hynix Inc | MT4LSDT464HG-10EC3 vs HYM5V64404ATK-60 |