Datasheets
MTD2N40E-T4 by:

2A, 400V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET

Part Details for MTD2N40E-T4 by Motorola Mobility LLC

Overview of MTD2N40E-T4 by Motorola Mobility LLC

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for MTD2N40E-T4

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MTD2N40E-T4 Part Data Attributes

MTD2N40E-T4 Motorola Mobility LLC
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MTD2N40E-T4 Motorola Mobility LLC 2A, 400V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 45 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 3.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 6 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MTD2N40E-T4

This table gives cross-reference parts and alternative options found for MTD2N40E-T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD2N40E-T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MTD20N06HDL-1 20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369-07, DPAK-3 Motorola Mobility LLC MTD2N40E-T4 vs MTD20N06HDL-1
MTD3055VT4 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi MTD2N40E-T4 vs MTD3055VT4
MTD1N50ET4 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi MTD2N40E-T4 vs MTD1N50ET4
MTD3055V1 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi MTD2N40E-T4 vs MTD3055V1
MTD20N06HDL1 20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369-07, DPAK-3 Motorola Mobility LLC MTD2N40E-T4 vs MTD20N06HDL1
MTD3055V-1 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 Motorola Mobility LLC MTD2N40E-T4 vs MTD3055V-1
IRLU024 Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 International Rectifier MTD2N40E-T4 vs IRLU024
MTD3055EL1 TRANSISTOR 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, FET General Purpose Power National Semiconductor Corporation MTD2N40E-T4 vs MTD3055EL1
MTD3055V1 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 Motorola Mobility LLC MTD2N40E-T4 vs MTD3055V1
MTD3055EL-1 Power Field-Effect Transistor, 10A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 Motorola Semiconductor Products MTD2N40E-T4 vs MTD3055EL-1
Part Number Description Manufacturer Compare
BUZ71L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens MTD2N40E-T4 vs BUZ71L
HUF76429D3ST Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation MTD2N40E-T4 vs HUF76429D3ST
IRFR024NTR Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier MTD2N40E-T4 vs IRFR024NTR
2SJ602-ZJ-AZ 20A, 60V, 0.107ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN Renesas Electronics Corporation MTD2N40E-T4 vs 2SJ602-ZJ-AZ
2SJ174 20A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Renesas Electronics Corporation MTD2N40E-T4 vs 2SJ174
RFP14N05L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation MTD2N40E-T4 vs RFP14N05L
MTD15N06VT4 15A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi MTD2N40E-T4 vs MTD15N06VT4
BUZ71 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Vishay Siliconix MTD2N40E-T4 vs BUZ71
RFD14N06L 14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation MTD2N40E-T4 vs RFD14N06L
HUF75309D3ST Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor MTD2N40E-T4 vs HUF75309D3ST

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