Datasheets
MTP16N25E by:

16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN

Part Details for MTP16N25E by onsemi

Overview of MTP16N25E by onsemi

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Applications Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Price & Stock for MTP16N25E

Part # Distributor Description Stock Price Buy
DISTI # 73AK7427
Newark Mtp16N25E, Single Mosfets |Onsemi MTP16N25E Min Qty: 320 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $1.6200
  • 500 $1.5000
  • 1,000 $1.3400
  • 2,500 $1.0900
  • 5,000 $1.0500
$1.0500 / $1.6200 Buy Now
DISTI # 2156-MTP16N25E-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 258 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 8010
In Stock
  • 258 $1.1600
$1.1600 Buy Now
Rochester Electronics MTP16N25E - 16A, 250V, 0.25ohm, N-Channel Power MOSFET, TO-220AB ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 8010
  • 1 $1.1700
  • 25 $1.1500
  • 100 $1.1000
  • 500 $1.0500
  • 1,000 $0.9959
$0.9959 / $1.1700 Buy Now
DISTI # 4184556
Farnell MTP16N25E, SINGLE MOSFETS RoHS: Compliant Min Qty: 312 Lead time: 3 Weeks, 1 Days Container: Each 8010
  • 312 $1.1464
$1.1464 Buy Now

Part Details for MTP16N25E

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MTP16N25E Part Data Attributes:

MTP16N25E onsemi
Buy Now Datasheet
Compare Parts:
MTP16N25E onsemi 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code TO-220AB
Package Description CASE 221A-06, 3 PIN
Pin Count 3
Manufacturer Package Code CASE 221A-06
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 384 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MTP16N25E

This table gives cross-reference parts and alternative options found for MTP16N25E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP16N25E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STP16NB25 16A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics MTP16N25E vs STP16NB25
IRF644 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC MTP16N25E vs IRF644
IRF644PBF Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier MTP16N25E vs IRF644PBF
IRF644 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier MTP16N25E vs IRF644
IRF644 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation MTP16N25E vs IRF644
IRF644 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Siliconix MTP16N25E vs IRF644
BUZ255 Power Field-Effect Transistor, 13A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens MTP16N25E vs BUZ255
MTP16N25E 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN Rochester Electronics LLC MTP16N25E vs MTP16N25E
MTP16N25E 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC MTP16N25E vs MTP16N25E
Part Number Description Manufacturer Compare
IRF644 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Siliconix MTP16N25E vs IRF644
MTP16N25E 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC MTP16N25E vs MTP16N25E
STP16NB25 16A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics MTP16N25E vs STP16NB25
IRF644 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC MTP16N25E vs IRF644
BUZ255 Power Field-Effect Transistor, 13A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens MTP16N25E vs BUZ255
IRF644 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation MTP16N25E vs IRF644
MTP16N25E 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN Rochester Electronics LLC MTP16N25E vs MTP16N25E
IRF644PBF Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier MTP16N25E vs IRF644PBF
IRF644 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier MTP16N25E vs IRF644

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