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Overview of MUPT10E3 by Microsemi Corporation
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- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for MUPT10E3 by Microsemi Corporation
Part Data Attributes for MUPT10E3 by Microsemi Corporation
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
MICROSEMI CORP
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.10.00.50
|
Breakdown Voltage-Min
|
11 V
|
Case Connection
|
ANODE
|
Clamping Voltage-Max
|
18 V
|
Configuration
|
SINGLE
|
Diode Element Material
|
SILICON
|
Diode Type
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JEDEC-95 Code
|
DO-216AA
|
JESD-30 Code
|
S-PSSO-G1
|
Non-rep Peak Rev Power Dis-Max
|
1000 W
|
Number of Elements
|
1
|
Number of Terminals
|
1
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-65 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
SQUARE
|
Package Style
|
SMALL OUTLINE
|
Polarity
|
UNIDIRECTIONAL
|
Power Dissipation-Max
|
2.5 W
|
Reference Standard
|
AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
|
Rep Pk Reverse Voltage-Max
|
10 V
|
Reverse Current-Max
|
2 µA
|
Reverse Test Voltage
|
10 V
|
Surface Mount
|
YES
|
Technology
|
AVALANCHE
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|