Part Details for MV1N8164US by Microsemi Corporation
Overview of MV1N8164US by Microsemi Corporation
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Applications
Consumer Electronics
Energy and Power Systems
Electronic Manufacturing
Renewable Energy
Automotive
Part Details for MV1N8164US
MV1N8164US CAD Models
MV1N8164US Part Data Attributes
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MV1N8164US
Microsemi Corporation
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MV1N8164US
Microsemi Corporation
Trans Voltage Suppressor Diode
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Package Description | MELF-2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.50 | |
Breakdown Voltage-Min | 34.2 V | |
Clamping Voltage-Max | 49.9 V | |
Configuration | SINGLE | |
Diode Capacitance-Min | 4 pF | |
Diode Element Material | SILICON | |
Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
JESD-30 Code | O-LELF-R2 | |
Non-rep Peak Rev Power Dis-Max | 150 W | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Polarity | UNIDIRECTIONAL | |
Power Dissipation-Max | 1 W | |
Rep Pk Reverse Voltage-Max | 30 V | |
Reverse Current-Max | 0.5 µA | |
Reverse Test Voltage | 30 V | |
Surface Mount | YES | |
Technology | AVALANCHE | |
Terminal Form | WRAP AROUND | |
Terminal Position | END |