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MXLUPTB10E3 by:

Trans Voltage Suppressor Diode,

Part Details for MXLUPTB10E3 by Microsemi Corporation

Overview of MXLUPTB10E3 by Microsemi Corporation

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Part Details for MXLUPTB10E3

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MXLUPTB10E3 Part Data Attributes

MXLUPTB10E3 Microsemi Corporation
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MXLUPTB10E3 Microsemi Corporation Trans Voltage Suppressor Diode,
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Microsemi Corporation
Breakdown Voltage-Min 11 V
Clamping Voltage-Max 18 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-216AA
JESD-30 Code S-PSSO-G1
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1000 W
Number of Elements 1
Number of Terminals 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity BIDIRECTIONAL
Power Dissipation-Max 2.5 W
Reference Standard AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 10 V
Reverse Current-Max 2 µA
Reverse Test Voltage 10 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE

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