Datasheets
NDT2955 by:

Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for NDT2955 by Fairchild Semiconductor Corporation

Overview of NDT2955 by Fairchild Semiconductor Corporation

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Price & Stock for NDT2955

Part # Distributor Description Stock Price Buy
Bristol Electronics   19
RFQ
Bristol Electronics   64
RFQ
Bristol Electronics   509
RFQ
Quest Components MOSFET Transistor, P-Channel, SOT-223 1
  • 1 $0.4839
$0.4839 Buy Now
Quest Components MOSFET Transistor, P-Channel, SOT-223 1752
  • 1 $3.0000
  • 433 $1.2375
  • 809 $1.1250
$1.1250 / $3.0000 Buy Now
ComSIT USA P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Europe - 730
RFQ
Chip 1 Exchange INSTOCK 1200
RFQ
Win Source Electronics MOSFET P-CH 60V 2.5A SOT-223-4 455870
  • 150 $0.3400
  • 360 $0.2790
  • 560 $0.2700
  • 770 $0.2610
  • 990 $0.2530
  • 1,325 $0.2270
$0.2270 / $0.3400 Buy Now

Part Details for NDT2955

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NDT2955 Part Data Attributes

NDT2955 Fairchild Semiconductor Corporation
Buy Now Datasheet
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NDT2955 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT-223
Pin Count 4
Manufacturer Package Code MOLDED PACKAGE, SOT-223, 4 LEAD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 174 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 3 W
Pulsed Drain Current-Max (IDM) 15 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NDT2955

This table gives cross-reference parts and alternative options found for NDT2955. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDT2955, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NDT2955 2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET Rochester Electronics LLC NDT2955 vs NDT2955
NDT2955 P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ, 4000-REEL onsemi NDT2955 vs NDT2955
NDT2955_NL Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT2955 vs NDT2955_NL
Part Number Description Manufacturer Compare
IRFL9014PBF Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 International Rectifier NDT2955 vs IRFL9014PBF
BSP170PL6327 Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG NDT2955 vs BSP170PL6327
NDT2955_NL Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT2955 vs NDT2955_NL
NDT2955 P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ, 4000-REEL onsemi NDT2955 vs NDT2955
NDT2955 2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET Rochester Electronics LLC NDT2955 vs NDT2955
RFT1P06E 1.4A, 60V, 0.285ohm, P-CHANNEL, Si, POWER, MOSFET Intersil Corporation NDT2955 vs RFT1P06E
IRFL9014 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier NDT2955 vs IRFL9014
IRFL9014TRPBF Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, International Rectifier NDT2955 vs IRFL9014TRPBF
IRFL9014TR Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier NDT2955 vs IRFL9014TR
RFT1P06E Power Field-Effect Transistor, 1.4A I(D), 60V, 0.285ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT2955 vs RFT1P06E

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