Part Details for NDT2955 by Fairchild Semiconductor Corporation
Overview of NDT2955 by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NDT2955
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 19 |
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RFQ | ||
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Bristol Electronics | 64 |
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RFQ | ||
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Bristol Electronics | 509 |
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RFQ | ||
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Quest Components | MOSFET Transistor, P-Channel, SOT-223 | 1 |
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$0.4839 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, SOT-223 | 1752 |
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$1.1250 / $3.0000 | Buy Now |
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ComSIT USA | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 730 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 1200 |
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RFQ | |
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Win Source Electronics | MOSFET P-CH 60V 2.5A SOT-223-4 | 455870 |
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$0.2270 / $0.3400 | Buy Now |
Part Details for NDT2955
NDT2955 CAD Models
NDT2955 Part Data Attributes
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NDT2955
Fairchild Semiconductor Corporation
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Datasheet
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NDT2955
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SOT-223 | |
Pin Count | 4 | |
Manufacturer Package Code | MOLDED PACKAGE, SOT-223, 4 LEAD | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 174 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 2.5 A | |
Drain-source On Resistance-Max | 0.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 3 W | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for NDT2955
This table gives cross-reference parts and alternative options found for NDT2955. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDT2955, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NDT2955 | 2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET | Rochester Electronics LLC | NDT2955 vs NDT2955 |
NDT2955 | P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ, 4000-REEL | onsemi | NDT2955 vs NDT2955 |
NDT2955_NL | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | NDT2955 vs NDT2955_NL |